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MPSH81

Part # MPSH81
Description TRANSISTOR RF PNP TO-92
Category TRANSISTOR
Availability In Stock
Qty 77
Qty Price
1 + $0.10436
Manufacturer Available Qty
Motorola Corp
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

PNP RF Transistor
This device is designed for general RF amplifier and mixer
applications to 250 mHz with collector currents in the 1.0 mA
to 30 mA range. Sourced from Process 75.
MMBTH81MPSH81
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 20 V
V
CBO
Collector-Base Voltage 20 V
V
EBO
Emitter-Base Voltage 3.0 V
I
C
Collector Current - Continuous 50 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSH81 *MMBTH81
P
D
Total Device Dissipation
Derate above 25
°
C
350
2.8
225
1.8
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case 125
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 357 556
°
C/W
C
E
B
TO-92
C
B
E
SOT-23
Mark: 3D
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
MPSH81 / MMBTH81
3
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage* I
C
= 1.0 mA, I
B
= 0 20 V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
µ
A, I
E
= 0
20 V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
µ
A, I
C
= 0
3.0 V
I
CBO
Collector Cutoff Current V
CB
= 10 V, I
E
= 0 100 nA
I
EBO
Emitter Cutoff Current V
EB
= 2.0 V, I
C
= 0 100 nA
h
FE
DC Current Gain I
C
= 5.0 mA, V
CE
= 10 V 60
V
CE(
sat
)
Collector-Emitter Saturation Voltage I
C
= 5.0 mA, I
B
= 0.5 mA 0.5 V
V
BE(
on
)
Base-Emitter On Voltage I
C
= 5.0 mA, V
CE
= 10 V 0.9 V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product I
C
= 5.0 mA, V
CE
= 10 V,
f = 100 MHz
600 MHz
C
cb
Collector-Base Capacitance V
CB
= 10 V, I
E
= 0, f = 1.0 MHz 0.85 pF
C
ce
Collector Emitter Capcitance V
CB
= 10 V, I
B
= 0, f = 1.0 MHz 0.65 pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
Symbol Parameter Test Conditions Min Max Units
PNP RF Transistor
(continued)
MPSH81 / MMBTH81
PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1
Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026
Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10)
Spice Model
DC Current Gain vs
Collector Current
0.1 1 10 100
0
20
40
60
80
100
120
140
160
180
200
I - COLLECTOR CURRENT (mA)
h - DC CURRENT GAIN
C
FE
V = 1.0V
CE
---
-
T = 125°C
A
T = 25°C
A
T = 55°C
A
-
Collector Saturation Voltage
vs Collector Current
0.1 1 10 100
0. 01
0. 02
0. 05
0.1
0.2
0.5
1
I - COLLECTOR CURRENT (mA)
V - COLLECTOR SAT. VOLTAGE (V)
C
-
--
-
-
-
-
-
-
-
T = 55°C
A
-
T = 25°C
A
T = 125°C
A
I = 10 I
C
B
-
CE( SAT )
MPSH81 / MMBTH81
Typical Characteristics (continued)
PNP RF Transistor
(continued)
Input / Output Capacitance
vs Reverse Bias Voltage
-10-8-6-4-20
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
C
ibo
f = 1.0 MHz
C
obo
Contours of Constant Gain
Bandwidth Product (f )
0.1 1 10 100
-14
-12
-10
-8
-6
-4
-2
0
I - COLLECTOR CURRENT (mA)
V - COLLECTOR VOLTAGE (V)
CE
C
-
-
-
-
T
200 MHz 500 MHz
900 MHz
200 MHz
500 MHz
1200 MHz
1500 MHz
Power Dissipation vs
Ambient Temperature
0 255075100125150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
SOT-23
TO-92
°
Base-Emitter ON Voltage
vs Collector Current
0.1 1 10 100
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-E MITTER ON VOLTAGE (V)
BE(ON)
C
V = 10V
CE
--
-
-
A
T = 25°C
A
T = 100°C
A
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-0.4
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER SAT. VOLTAGE (V)
BE( SAT)
C
--
-
-
T = 55
°
C
A
-
T = 25
°
C
A
T = 125
°
C
A
I = 10 I
C
B
Collector Reverse Current
vs Ambient Temperature
25 50 75 100 125 150
0.01
0.1
1
10
100
T - AM BIEN T TE MPE RATUR E ( C)
I - COLLECTOR REVERSE CURRENT (nA)
CES
A
V = -6.0V
CE
V = -3.0V
CE
°
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