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MMBZ20VALT1

Part # MMBZ20VALT1
Description TVS DIODE 17VWM 28VC SOT23
Category TRANSISTOR
Availability In Stock
Qty 85
Qty Price
1 + $0.02610
Manufacturer Available Qty
Motorola Corp
Date Code: 0031
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1
MOTOROLA
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
Transient Voltage Suppressors
for ESD Protection
These dual monolithic silicon zener diodes are designed for applications
requiring transient overvoltage protection capability. They are intended for use
in voltage and ESD sensitive equipment such as computers, printers, business
machines, communication systems, medical equipment and other applications.
Their dual junction common anode design protects two separate lines using
only one package. These devices are ideal for situations where board space is
at a premium.
Specification Features:
SOT–23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Peak Power — 24 or 40 Watts @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 µA
ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
Mechanical Characteristics:
Void Free, Transfer–Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel. Replace
the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel.
THERMAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (1) MMBZ5V6ALT1, MMBZ6V2ALT1
@ T
A
25°C MMBZ15VALT1, MMBZ20VALT1
P
pk
24
40
Watts
Total Power Dissipation on FR–5 Board (2) @ T
A
= 25°C
Derate above 25°C
°P
D
° 225
1.8
°mW°
mW/°C
Thermal Resistance Junction to Ambient R
θJA
556 °C/W
Total Power Dissipation on Alumina Substrate (3) @ T
A
= 25°C
Derate above 25°C
°P
D
° 300
2.4
°mW
mW/°C
Thermal Resistance Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature Range T
J
T
stg
– 55 to +150 °C
Lead Solder Temperature — Maximum (10 Second Duration) T
L
260 °C
(1) Non–repetitive current pulse per Figure 5 and derate above T
A
= 25°C per Figure 6.
(2) FR–5 = 1.0 x 0.75 x 0.62 in.
(3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
*Other voltages may be available upon request
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBZ5V6ALT1/D
Motorola, Inc. 1996
Rev 1
SOT–23 COMMON ANODE DUAL
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
24 & 40 WATTS
PEAK POWER
CASE 318–08
STYLE 12
LOW PROFILE SOT–23
PLASTIC
PIN 1. CATHODE
2. CATHODE
3. ANODE
1
3
2
Motorola Preferred Devices
1
2
3
MOTOROLA
2
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V
F
= 0.9 V Max @ I
F
= 10 mA)
Breakdown Voltage
Max Reverse
Leakage Current
Max Zener Impedance (5)
Max
Reverse
Surge
Current
I
RSM
(4)
(A)
Max Reverse
Voltage @
I
RSM
(4)
(Clamping
Voltage)
V
RSM
(V)
Maximum
Temperature
Coefficient of
V
BR
(mV/°C)
V
ZT
(3)
(V)
@ I
T
(mA)
I
R
@ V
R
(µA) (V)
Z
ZT
@ I
ZT
() (mA)
Surge
Current
I
RSM
(4)
(A)
I
RSM
(4)
(Clamping
Voltage)
V
RSM
(V)
Temperature
Coefficient of
V
BR
(mV/°C)
Min Nom Max
(mA)
(µA) (V)
() (mA)
I
RSM
(4)
(A)
V
RSM
(V)
(mV/°C)
5.32 5.6 5.88 20 5.0 3.0 11 1600 0.25 3.0 8.0 1.26
5.89 6.2 6.51 1.0 0.5 3.0 2.76 8.7 2.80
(V
F
= 1.1 V Max @ I
F
= 200 mA)
Breakdown Voltage
Reverse Voltage
Working Peak
V
RWM
(V)
Max Reverse
Leakage Current
I
RWM
I
R
(nA)
Max Reverse
Surge Current
I
RSM
(4)
(A)
Max Reverse
Voltage @ I
RSM
(4)
(Clamping Voltage)
V
RSM
(V)
Maximum
Temperature
Coefficient of
V
BR
(mV/°C)
V
BR
(3)
(V)
@ I
T
(mA)
Reverse Voltage
Working Peak
V
RWM
(V)
Max Reverse
Leakage Current
I
RWM
I
R
(nA)
Max Reverse
Surge Current
I
RSM
(4)
(A)
Voltage @ I
RSM
(4)
(Clamping Voltage)
V
RSM
(V)
Temperature
Coefficient of
V
BR
(mV/°C)
Min Nom Max
(mA)
(V)
I
R
(nA)
(A)
V
RSM
(V)
V
BR
(mV/°C)
14.25 15 15.75 1.0 12.0 50 1.9 21 12.3
19.0 20 21.0 1.0 17.0 50 1.4 28 17.2
(3) V
Z
/V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
(4) Surge current waveform per Figure 5 and derate per Figure 6.
(5) Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current supplied. The specfied limits are
(5) I
Z(AC)
= 0.1 I
Z(DC)
, with AC frequency = 1 kHz.
TYPICAL CHARACTERISTICS
40 +50
18
BREAKDOWN VOLTAGE (VOLTS)
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
0
TEMPERATURE (
°
C)
+100 +150
15
12
9
6
3
0
(V
Z
, V
BR
@ I
T
)
40 +25
1000
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (
°
C)
+85 +125
100
10
1
0.1
0.01
I
R
(nA)
3
MOTOROLA
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
0 25 50 75 100 125 150 175
300
250
200
150
100
50
0
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
P
D
, POWER DISSIPATION (mW)
TEMPERATURE (
°
C)
FR–5 BOARD
ALUMINA SUBSTRATE
0 1 2 3
320
280
240
160
120
40
0
Figure 4. Steady State Power Derating Curve
C, CAPACITANCE (pF)
BIAS (V)
200
80
15 V
VALUE (%)
100
50
0
0 1 2 3 4
t, TIME (ms)
Figure 5. Pulse Waveform
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF I
RSM
.
t
r
10
µ
s
HALF VALUE —
I
RSM
2
t
P
t
r
PEAK VALUE — I
RSM
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (
°
C)
Figure 6. Pulse Derating Curve
PEAK PULSE DERATING IN % OF PEAK POWER
OR CURRENT @ T
A
= 25
C
°
Figure 7. Maximum Non–repetitive Surge
Power, P
pk
versus PW
P
0.1 1 10 100 1000
1
10
100
Power is defined as V
RSM
x I
Z
(pk) where V
RSM
is
the clamping voltage at I
Z
(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, T
A
= 25
°
C
BIDIRECTIONAL
Figure 8. Maximum Non–repetitive Surge
Power, P
pk
(NOM) versus PW
0.1 1 10 100 1000
1
10
100
PW, PULSE WIDTH (ms)
pk
PEAK SURGE POWER (W)
P
pk
PEAK SURGE POWER (W)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, T
A
= 25
°
C
BIDIRECTIONAL
MMBZ5V6ALT1 MMBZ5V6ALT1
Power is defined as V
Z
(NOM) x I
Z
(pk) where
V
Z
(NOM) is the nominal zener voltage measured at
the low test current used for voltage classification.
UNIDIRECTIONAL
5.6 V
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