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MMBT589LT1G

Part # MMBT589LT1G
Description SS SOT23 LS XSTR PNP 50V - Tape and Reel
Category TRANSISTOR
Availability Out of Stock
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Qty Price
1 + $0.05997

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 4
1 Publication Order Number:
MMBT589LT1/D
MMBT589LT1
High Current Surface Mount
PNP Silicon Switching
Transistor for Load
Management in
Portable Applications
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−30 Vdc
Collector−Base Voltage V
CBO
−50 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−1.0 Adc
Collector Current − Peak I
CM
−2.0 A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
310
2.5
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
403 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
710
5.7
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
q
JA
176 °C/W
Total Device Dissipation (Ref. Figure 8)
(Single Pulse < 10 sec.)
P
Dsingle
575 mW
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
http://onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 6
Device Package Shipping
†
ORDERING INFORMATION
MMBT589LT1 SOT−23 3,000 / Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBT589LT1G SOT−23
(Pb−Free)
3,000 / Tape & Ree
l
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
G3 M G
G
G3 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
30 VOLTS, 2.0 AMPS
PNP TRANSISTORS
COLLECTOR
3
1
BASE
2
EMITTER
MMBT589LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −10 mAdc, I
B
= 0)
V
(BR)CEO
−30 − Vdc
Collector−Base Breakdown Voltage
(I
C
= −0.1 mAdc, I
E
= 0)
V
(BR)CBO
−50 − Vdc
Emitter−Base Breakdown Voltage
(I
E
= −0.1 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 − Vdc
Collector Cutoff Current
(V
CB
= −30 Vdc, I
E
= 0)
I
CBO
− −0.1
mAdc
Collector−Emitter Cutoff Current
(V
CES
= −30 Vdc)
I
CES
− −0.1
mAdc
Emitter Cutoff Current
(V
EB
= −4.0 Vdc)
I
EBO
− −0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3) (Figure 1)
(I
C
= −1.0 mA, V
CE
= −2.0 V)
(I
C
= −500 mA, V
CE
= −2.0 V)
(I
C
= −1.0 A, V
CE
= −2.0 V)
(I
C
= 2.0 A, V
CE
= −2.0 V)
h
FE
100
100
80
40
−
300
−
−
−
Collector−Emitter Saturation Voltage (Note 3) (Figure 3)
(I
C
= −0.5 A, I
B
= −0.05 A)
(I
C
= −1.0 A, I
B
= 0.1 A)
(I
C
= −2.0 A, I
B
= −0.2 A)
V
CE(sat)
−
−
−
−0.25
−0.30
−0.65
V
Base−Emitter Saturation Voltage (Note 3) (Figure 2)
(I
C
= −1.0 A, I
B
= −0.1 A)
V
BE(sat)
− −1.2 V
Base−Emitter Turn−on Voltage (Note 3)
(I
C
= −1.0 A, V
CE
= −2.0 V)
V
BE(on)
− −1.1 V
Cutoff Frequency
(I
C
= −100 mA, V
CE
= −5.0 V, f = 100 MHz)
f
T
100 − MHz
Output Capacitance
(f = 1.0 MHz)
Cobo − 15 pF
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
MMBT589LT1
http://onsemi.com
3
Figure 1. DC Current Gain versus
Collector Current
Figure 2. DC Current Gain versus
Collector Current
Figure 3. “On” Voltages Figure 4. Base Emitter Saturation Voltage
versus Collector Current
Figure 5. Collector Emitter Saturation Voltage
versus Collector Current
Figure 6. Collector Emitter Saturation Voltage
versus Collector Current
100.001
I
C
, COLLECTOR CURRENT (AMPS)
200
150
100
50
I
C
, COLLECTOR CURRENT (mA)
100 10001.0
130
90
70
50
100 10001.0
I
C
, COLLECTOR CURRENT (mA)
1.0
0.4
0.3
0.2
0.1
0
I
C
, COLLECTOR CURRENT (AMPS)
0.010.001
1.0
0.95
0.6
0.55
0.5
1.00.01
I
B
, BASE CURRENT (mA)
1.0
0.6
0.4
0.2
0
I
C
, COLLECTOR CURRENT (AMPS)
0.001
1.8
1.0
0.8
0.6
0.2
0
0.10.1
h
FE
, DC CURRENT GAINV, VOLTAGE (VOLTS)
V
BE(sat)
, BASE EMITTER SATURATION
0
0.01 0.1 1.0 10
110
150
170
10 0.1 1.0 10
, COLLECTOR−EMITTER VOLTAGE (VOLTS)V
CE
10 1000100
0.8
0.01 101.0
0.4
V
CE(sat)
, COLLECTOR EMITTER SATURATION
V
CE
= −2.0 V
h
FE
, DC CURRENT GAIN
190
210
230
V
CE
= −1.0 V
125°C
25°C
−55°C
0.8
0.7
0.6
0.5
0.9
V
BE(sat)
V
CE(sat)
V
BE(on)
0.7
0.65
0.8
0.75
0.9
0.85
I
C
/I
B
= 100
I
C
/I
B
= 10
VOLTAGE (VOLTS)
1.6
1.4
1.2
VOLTAGE (VOLTS)
I
C
/I
B
= 100
I
C
/I
B
= 10
1000 mA
100 mA
50 mA
10 mA
12NEXT
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