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MMBF4416LT1

Part # MMBF4416LT1
Description MOSFET SS N-CHAN VHF 30V SOT23
Category TRANSISTOR
Availability Out of Stock
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1 + $0.14238



Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
N–Channel
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DS
30 Vdc
Drain–Gate Voltage V
DG
30 Vdc
Gate–Source Voltage V
GS
30 Vdc
Gate Current I
G
10 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
JA
556 °C/W
Junction and Storage Temperature T
J
, T
stg
55 to +150 °C
DEVICE MARKING
MMBF4416LT1 = M6A
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(I
G
= 1.0 µAdc, V
DS
= 0)
V
(BR)GSS
30 Vdc
Gate Reverse Current
(V
GS
= 20 Vdc, V
DS
= 0)
(V
GS
= 20 Vdc, V
DS
= 0, T
A
= 150°C)
I
GSS
1.0
200
nAdc
Gate Source Cutoff Voltage
(I
D
= 1.0 nAdc, V
DS
= 15 Vdc)
V
GS(off)
6.0 Vdc
Gate Source Voltage
(I
D
= 0.5 mAdc, V
DS
= 15 Vdc)
V
GS
1.0 5.5 Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(V
GS
= 15 Vdc, V
GS
= 0)
I
DSS
5.0 15 mAdc
Gate–Source Forward Voltage
(I
G
= 1.0 mAdc, V
DS
= 0)
V
GS(f)
1.0 Vdc
1. FR–5 = 1.0 0.75 0.062 in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBF4416LT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
1
2
3
CASE 31808, STYLE 10
SOT–23 (TO236AB)
Motorola, Inc. 1996
2 SOURCE
3
GATE
1 DRAIN
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
|Y
fs
| 4500 7500 µmhos
Output Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
|y
os
| 50 µmhos
Input Capacitance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
4.0 pF
Reverse Transfer Capacitance
(V
DS
= 15 Vdc, V
GS
= 0, f = 10 MHz)
C
rss
0.8 pF
Output Capacitance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 MHz)
C
oss
2.0 pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(V
DS
= 15 Vdc, I
D
= 5.0 mAdc, R
g
1000 , f = 100 MHz)
(V
DS
= 15 Vdc, I
D
= 5.0 mAdc, R
g
1000 , f = 400 MHz)
NF
2.0
4.0
dB
Common Source Power Gain
(V
DS
= 15 Vdc, I
D
= 5.0 mAdc, f = 100 MHz)
(V
DS
= 15 Vdc, I
D
= 5.0 mAdc, f = 400 MHz)
G
ps
18
10
dB
P
G
, POWER GAIN (dB)
POWER GAIN
2.0
I
D
, DRAIN CURRENT (mA)
Figure 1. Effects of Drain Current
4.0
24
8.0
12
16
20
0 4.0 6.0 8.0 10 12 14
f = 100 MHz
400 MHz
T
channel
= 25
°
C
V
DS
= 15 Vdc
V
GS
= 0 V
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NF, NOISE FIGURE (dB)
2.0
V
DS
, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit
0
10
2.0
4.0
6.0
8.0
0 4.0 6.0 8.0 10 12 14
I
D
= 5.0 mA
100 MHz
V
DS
= 15 Vdc
f1 = 399 MHz
f2 = 400 MHz
NF, NOISE FIGURE (dB)
2.0
I
D
, DRAIN CURRENT (mA)
1.5
6.5
2.5
3.5
4.5
5.5
0 4.0 6.0 8.0 10 12 14
Figure 3. Effects of Drain–Source Voltage Figure 4. Effects of Drain Current
NOISE FIGURE
(T
channel
= 25°C)
*L1 17 turns, (approx. — depends upon circuit layout) AWG #28
enameled copper wire, close wound on 9/32 ceramic coil
form. Tuning provided by a powdered iron slug.
*L2 4–1/2 turns, AWG #18 enameled copper wire, 5/16 long,
3/8 I.D. (AIR CORE).
*L3 3–1/2 turns, AWG #18 enameled copper wire, 1/4 long,
3/8 I.D. (AIR CORE).
**L1 6 turns, (approx. — depends upon circuit layout) AWG #24
enameled copper wire, close wound on 7/32 ceramic coil
form. Tuning provided by an aluminum slug.
**L2 1 turn, AWG #16 enameled copper wire, 3/8 I.D.
(AIR CORE).
**L3 1/2 turn, AWG #16 enameled copper wire, 1/4 I.D.
(AIR CORE).
Adjust V
GS
for
I
D
= 50 mA
V
GS
< 0 Volts
NOTE: The noise source is a hot–cold body
(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).
Reference
Designation
VALUE
100 MHz 400 MHz
C1
7.0 pF 1.8 pF
C2 1000 pF 17 pF
C3 3.0 pF 1.0 pF
C4 1–12 pF 0.8–8.0 pF
C5 1–12 pF 0.8–8.0 pF
C6 0.0015 µF 0.001 µF
C7 0.0015 µF 0.001 µF
L1 3.0 µH* 0.2 µH**
L2 0.15 µH* 0.03 µH**
L3 0.14 µH* 0.022 µH**
INPUT
TO 50
SOURCE
NEUTRALIZING
COIL
L1
C5
L3R
g
C1
C6
C4
L2
C3
TO 500
LOAD
CASE
C7
COMMON
I
D
= 5.0 mA
V
GS
V
DS
+15 V
C2
P
in
, INPUT POWER PER TONE (dB)
+40
Figure 5. Third Order Intermodulation Distortion
P , OUTPUT POWER PER TONE (dB)
out
16 18 20
f = 400 MHz
f = 400 MHz
100 MHz
V
DS
= 15 V
V
GS
= 0 V
+20
0
–20
–40
–60
–80
100
120
140
160
120 100 80 60 40 20 0 +20
3RD ORDER INTERCEPT
FUNDAMENTAL
OUTPUT @ I
DSS
,
0.25 I
DSS
3RD ORDER IMD
OUTPUT @ I
DSS
,
0.25 I
DSS
INTERMODULATION CHARACTERISTICS
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