2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25 C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1) MJE700,T, MJE800,T
(I
C
= 50 mAdc, I
B
= 0) MJE702, MJE703, MJE802, MJE803
V
(BR)CEO
60
80
—
—
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0) MJE700,T, MJE800,T
(V
CE
= 80 Vdc, I
B
= 0) MJE702, MJE703, MJE802, MJE803
I
CEO
—
—
100
100
µAdc
Collector Cutoff Current (V
CB
= Rated BV
CEO
, I
E
= 0)
Collector Cutoff Current (V
CB
= Rated BV
CEO
, I
E
= 0, T
C
= 100 C)
I
CBO
—
—
100
500
µAdc
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0) I
EBO
— 2.0 mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc) MJE700,T, MJE702, MJE800,T, MJE802
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc) MJE703, MJE803
(I
C
= 4.0 Adc, V
CE
= 3.0 Vdc) All devices
h
FE
750
750
100
—
—
—
—
Collector–Emitter Saturation Voltage (1)
(I
C
= 1.5 Adc, I
B
= 30 mAdc) MJE700,T, MJE702, MJE800,T, MJE802
(I
C
= 2.0 Adc, I
B
= 40 mAdc) MJE703, MJE803
(I
C
= 4.0 Adc, I
B
= 40 mAdc) All devices
V
CE(sat)
—
—
—
2.5
2.8
3.0
Vdc
Base–Emitter On Voltage (1)
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc) MJE700,T, MJE702, MJE800,T, MJE802
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc) MJE703, MJE803
(I
C
= 4.0 Adc, V
CE
= 3.0 Vdc) All devices
V
BE(on)
—
—
—
2.5
2.5
3.0
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain (I
C
= 1.5 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz) h
fe
1.0 — —
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
0.04 0.2 2.00.1
0.06
0.4 1.0
4.0
I
C
, COLLECTOR CURRENT (AMP)
t, TIME ( s)
µ
2.0
1.0
0.8
0.6
0.4
0.2
t
s
Figure 2. Switching Times Test Circuit
t
r
t
d
@ V
BE(off)
= 0
PNP
NPN
4.00.6
Figure 3. Switching Times
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.05 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
Z
θ
JC(t)
= r(t) R
θ
JC
R
θ
JC
= 2.50
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
Z
θ
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02 0.1 0.50.2
0.02
Figure 4. Thermal Response (MJE700T, 800T Series)
V
2
APPROX
+ 8.0 V
0
≈
6.0 k
SCOPE
V
CC
– 30 V
R
C
51
For t
d
and t
r
, D
1
id disconnected
and V
2
= 0, R
B
and R
C
are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
25
µ
s
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
V
1
APPROX
–12 V
TUT
R
B
D
1
≈
150
t
f
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25
°
C
