1
Motorola Thyristor Device Data
Reverse Blocking Triode Thyristors
PNPN devices designed for high volume, line-powered consumer applications such
as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and
sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package
which is readily adaptable for use in automatic insertion equipment.
• Sensitive Gate Trigger Current — 200 µA Maximum
• Low Reverse and Forward Blocking Current — 100 µA Maximum, T
C
= 125°C
• Low Holding Current — 5 mA Maximum
• Glass-Passivated Surface for Reliability and Uniformity
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted.)
Rating
Symbol Value Unit
Peak Repetitive Forward and Reverse Blocking Voltage
(1)
(T
J
= 25 to 125°C, R
GK
= 1 kΩ MCR100-3
MCR100-4
MCR100-6
MCR100-8
V
DRM
and
V
RRM
100
200
400
600
Volts
Forward Current RMS (See Figures 1 & 2)
(All Conduction Angles)
I
T(RMS)
0.8 Amps
Peak Forward Surge Current, T
A
= 25°C
(1/2 Cycle, Sine Wave, 60 Hz)
I
TSM
10 Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I
2
t 0.415 A
2
s
Peak Gate Power — Forward, T
A
= 25°C P
GM
0.1 Watts
Average Gate Power — Forward, T
A
= 25°C P
GF(AV)
0.01 Watt
Peak Gate Current — Forward, T
A
= 25°C
(300 µs, 120 PPS)
I
GFM
1 Amp
Peak Gate Voltage — Reverse V
GRM
5 Volts
Operating Junction Temperature Range @ Rated V
RRM
and V
DRM
T
J
–40 to +125 °C
Storage Temperature Range T
stg
–40 to +150 °C
Lead Solder Temperature
( 1/16 from case, 10 s max)
— +230 °C
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
