Absolute Maximum Ratings
Parameter Units
I
D
@ V
GS
= 10V, T
C
= 25°C Continuous Drain Current 4.5
I
D
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current 3.0
I
DM
Pulsed Drain Current ➀ 18
P
D
@ T
C
= 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.6 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy ➁ 1.1 mJ
I
AR
Avalanche Current ➀ 4.5 A
E
AR
Repetitive Avalanche Energy ➀ —mJ
dv/dt Peak Diode Recovery dv/dt ➂ 3.5
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (typical) g
PD - 90336F
o
C
A
01/22/01
www.irf.com 1
Product Summary
Part Number BVDSS RDS(on) ID
IRF430 500V 1.5 Ω 4.5A
For footnotes refer to the last page
REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762
HEXFET
TRANSISTORS
JANTXV2N6762
THRU-HOLE (TO-204AA/AE)
[REF:MIL-PRF-19500/542]
IRF430
500V, N-CHANNEL
The HEXFET
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
