TECHNICAL DATA
PNP MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/561
Devices Qualified Level
2N6193
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N6193 Units
Collector-Emitter Voltage
V
CEO
100 Vdc
Collector-Base Voltage
V
CBO
100 Vdc
Emitter-Base Voltage
V
EBO
6.0 Vdc
Collector Current
I
C
5.0 Adc
Base Current
I
B
1.0 Adc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
1.0
10
W
W
Operating & Storage Temperature Range
T
op
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
17.5
0
C/W
1) Derate linearly 5.71mW/
0
C for T
A
> +25
0
C
2) Derate linearly 57.1mW/
0
C for T
C
> +25
0
C
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
I
C
= 50 mAdc
V
CEO(sus)
100 Vdc
Collector-Emitter Cutoff Current
V
CE
= 100 Vdc
I
CEO
100
µAdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
I
EBO
100
µAdc
Collector-Emitter Cutoff Current
V
CE
= 90 Vdc, V
BE
= 1.5 Vdc
I
CEX
10
µAdc
Collector-Base Cutoff Current
V
CB
= 100 Vdc
I
CBO
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
