TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/454
Devices Qualified Level
2N5660 2N5661 2N5662 2N5663
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol
2N5660
2N5662
2N5661
2N5663
Unit
Collector-Emitter Voltage
V
CEO
200 300 Vdc
Collector-Base Voltage
V
CBO
250 400 Vdc
Collector-Emitter Voltage
V
CER
250 400 Vdc
Emitter-Base Voltage
V
EBO
6.0 Vdc
Base Current I
B
0.5 Adc
Collector Current
I
C
2.0 Adc
2N5660
2N5661
2N5662
2N5663
Total Power Dissipation @ T
A
= +25
0
C
@ T
C
= +100
0
C
P
T
2.0
(1)
20
(3)
1.0
(2)
15
(4)
W
W
Operating & Storage Junction Temperature Range
T
J
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol
2N5660
2N5661
2N5662
2N5663
Unit
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
R
θJC
R
θJA
5.0
87.5
6.67
145.8
0
C/W
1) Derate linearly 11.4 mW/
0
C for T
A
>+ 25
0
C
2) Derate linearly 5.7 mW/
0
C for T
A
> +25
0
C
3) Derate linearly 200 mW/
0
C for T
C
> +100
0
C
4) Derate linearly 150 mW/
0
C for T
C
> +100
0
C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc 2N5660, 2N5662
2N5661, 2N5663
V
(BR)
CEO
200
300
Vdc
Collector-Base Breakdown Voltage
I
C
= 10 mAdc, R
BE
= 100Ω 2N5660, 2N5662
2N5661, 2N5663
V
(BR)
CER
250
400
Vdc
Emitter-Base Breakdown Voltage
I
E
= 10 µAdc
V
(BR)
EBO
6.0
Vdc
6 Lake Street, Lawrence, MA 01841
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Page 1 of 2
TO-66*
(TO-213AA)
2N5660, 2N5661
TO-5*
2N5662, 2N5663