TECHNICAL DATA
PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/485
Devices Qualified Level
2N5415
2N5415S
2N5416
2N5416S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N5415 2N5416 Units
Collector-Emitter Voltage
V
CEO
200 300 Vdc
Collector-Base Voltage
V
CBO
200 350 Vdc
Emitter-Base Voltage
V
EBO
6.0 Vdc
Collector Current
I
C
1.0 Adc
Total Power Dissipation @ T
A
= +25
0
C
@ T
C
= +25
0
C
P
T
0.75
10
W
W
Operating & Storage Temperature Range
T
op
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
17.5
0
C/W
1) Derate linearly 4.28 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 57.1 mW/
0
C for T
C
> +25
0
C
TO- 5*
2N5415, 2N5416
2N5415S, 2N5416S
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
V
CE
= 150 Vdc 2N5415
V
CE
= 200 Vdc 2N5415
V
CE
= 250 Vdc 2N5416
V
CE
= 300 Vdc 2N5416
I
CEO
50
1.0
50
1.0
µAdc
mAdc
µAdc
mAdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
I
EBO
20
µAdc
Collector-Emitter Cutoff Current
V
CE
= 200 Vdc, V
BE
= 1.5 Vdc 2N5415
V
CE
= 300 Vdc, V
BE
= 1.5 Vdc 2N5416
I
CEX
50
50
µAdc
µAdc
Collector-Base Cutoff Current
V
CB
= 175 Vdc 2N5415
V
CB
= 280 Vdc 2N5416
I
CBO1
50
50
µAdc
Collector-Base Cutoff Current
V
CB
= 200 Vdc 2N5415
V
CB
= 350 Vdc 2N5416
I
CBO2
500
500
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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