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JANTXV2N3749

Part # JANTXV2N3749
Description Trans GP BJT NPN 80V 5A 2000mW 3-Pin TO-59 Tray
Category TRANSISTOR
Availability In Stock
Qty 1
Qty Price
1 + $36.55627
Manufacturer Available Qty
CDCD
Date Code: 9123
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TECHNICAL DATA
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/315
Devices Qualified Level
2N2880 2N3749
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage
V
CEO
80 Vdc
Collector-Base Voltage
V
CBO
110 Vdc
Emitter-Base Voltage
V
EBO
8.0 Vdc
Base Current I
B
0.5 Adc
Collector Current
I
C
5.0
Adc
Total Power Dissipation @ T
A
= 25
0
C
(1)
@ T
C
= 100
0
C
(2)
P
T
2.0
30
W
Operating & Storage Junction Temperature Range
T
op
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
3.33
0
C/W
1) Derate linearly 11.4 mW/
0
C for T
A
> 25
0
C
2) Derate linearly 300 mW/
0
C for T
C
> 100
0
C
TO-59*
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
V
(BR)
CEO
80 Vdc
Collector-Emitter Breakdown Voltage
I
C
= 10 µAdc
V
(BR)
CBO
110 Vdc
Emitter-Base Breakdown to Voltage
I
E
= 10 µAdc
V
(BR)
EBO
8.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc
I
CEO
20
µAdc
Collector-Base Cutoff Current
V
CB
= 80 Vdc
I
CBO
0.2
µAdc
Collector-Emitter Cutoff Current
V
CE
= 110 Vdc, V
BE
= -0.5
I
CEX
1.0
µAdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
I
EBO
0.2
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2880, 2N3749 JAN SERIES
ELECTRICAL CHARACTERISTICS (Con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 5.0 Vdc
I
C
= 1.0 Adc, V
CE
= 2.0 Vdc
I
C
= 5.0 Adc, V
CE
= 5.0 Vdc
h
FE
40
40
15
120
120
Base-Emitter Voltage Non-Saturated
V
CE
= 2.0 Adc, I
C
=1.0 Adc
V
BE
1.2
Vdc
Collector-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc
I
C
= 5.0 Adc, I
B
= 0.5 Adc
V
CE(sat)
0.25
1.5
Vdc
Base-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc
V
BE(sat)
1.2
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 10 Vdc, f = 10 MHz
h
fe
3.0
12
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 5.0 Vdc, f = 1 kHz
h
fe
40
140
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 ≤ f ≤ 1.0 MHz
C
obo
150
pF
SAFE OPERATING AREA
DC Tests
T
C
= 100
0
C, t = 10 s
Test 1
V
CE
= 80 Vdc, I
C
= 80 mAdc
Test 2
V
CE
= 20 Vdc, I
C
= 1.5 Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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