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JANTX2N7228

Part # JANTX2N7228
Description 100V THRU 500V, UP TO 34A, N-CH, MOSFET PWR TRANSISTOR, RE
Category TRANSISTOR
Availability In Stock
Qty 3
Qty Price
1 - 2 $116.02519
3 + $87.89787
Manufacturer Available Qty
International Rectifier
Date Code: 0516
  • Shipping Freelance Stock: 1
    Ships Immediately
Omnirel Corp
Date Code: 9717
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Absolute Maximum Ratings
Parameter Units
I
D
@ V
GS
= 10V, T
C
= 25°C Continuous Drain Current 12
I
D
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current 8.0
I
DM
Pulsed Drain Current 48
P
D
@ T
C
= 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy 750 mJ
I
AR
Avalanche Current 12 A
E
AR
Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 3.5
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight 9.3 (Typical) g
HEXFET
®
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
o
C
A
POWER MOSFET
THRU-HOLE (TO-254AA)
02/05/02
www.irf.com 1
TO-254AA
Product Summary
Part Number RDS(on) ID
IRFM450 0.415 12A
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
For footnotes refer to the last page
IRFM450
JANTX2N7228
JANTXV2N7228
REF: MIL-PRF-19500/592
500V, N-CHANNEL
HEXFET
®
MOSFET TECHNOLOGY
PD - 90493F
IRFM450
2 www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 500 V V
GS
= 0V, I
D
= 1.0mA
BV
DSS
/T
J
Temperature Coefficient of Breakdown 0.68 V/°C Reference to 25°C, I
D
= 1.0mA
Voltage
R
DS(on)
Static Drain-to-Source On-State 0.415 V
GS
= 10V, I
D
= 8.0A
Resistance 0.515 V
GS
= 10V, I
D
= 12A
V
GS(th)
Gate Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 6.5 S ( )V
DS
> 15V, I
DS
= 8.0A
I
DSS
Zero Gate Voltage Drain Current 25 V
DS
= 400V ,V
GS
=0V
250 V
DS
= 400V,
V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Leakage Forward 100 V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse -100 V
GS
= -20V
Q
g
Total Gate Charge 120 V
GS
=10V, I
D
= 12A
Q
gs
Gate-to-Source Charge 19 nC V
DS
= 250V
Q
gd
Gate-to-Drain (‘Miller’) Charge 70
t
d(on)
Turn-On Delay Time 35 V
DD
= 250V, I
D
= 12A,
t
r
Rise Time 190 V
GS
=10V, R
G
= 2.35
t
d(off)
Turn-Off Delay Time 170
t
f
Fall Time 130
L
S
+ L
D
Total Inductance 6.8
C
iss
Input Capacitance 2700 V
GS
= 0V, V
DS
= 25V
C
oss
Output Capacitance 600 pF f = 1.0MHz
C
rss
Reverse Transfer Capacitance 240
nA
nH
ns
µA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
Junction-to-Case 0.83
R
thJCS
Case-to-Sink 0.21
R
thJA
Junction-to-Ambient 48 Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
S
Continuous Source Current (Body Diode) 12
I
SM
Pulse Source Current (Body Diode) —— 48
V
SD
Diode Forward Voltage 1.7 V T
j
= 25°C, I
S
= 12A, V
GS
= 0V
t
rr
Reverse Recovery Time 1600 nS T
j
= 25°C, I
F
= 12A, di/dt 100A/µs
Q
RR
Reverse Recovery Charge 14 µC V
DD
50V
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
S
+ L
D
.
A
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from package)
www.irf.com 3
IRFM450
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
123NEXT