Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
Junction-to-Case — — 6.25
R
thJA
Junction-to-Ambient — — 175 K/W Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
S
Continuous Source Current (Body Diode) — — 6.0 Modified MOSFET symbol showing the
I
SM
Pulse Source Current (Body Diode) ➀ —— 24 integral reverse p-n junction rectifier.
V
SD
Diode Forward Voltage — — 1.8 V T
j
= 25°C, I
S
= 6.0A, V
GS
= 0V ➃
t
rr
Reverse Recovery Time — — 240 ns T
j
= 25°C, I
F
= 6.0A, di/dt ≤ 100A/µs
Q
RR
Reverse Recovery Charge — — 2.0 µCV
DD
≤ 50V ➃
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
S
+ L
D
.
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 100 — — V V
GS
= 0V, I
D
= 1.0 mA
∆BV
DSS
/∆T
J
Temperature Coefficient of Breakdown — 0.10 — V/°C Reference to 25°C, I
D
= 1.0 mA
Voltage
R
DS(on)
Static Drain-to-Source — — 0.30 V
GS
= 10V, I
D
= 3.5A
On-State Resistance — — 0.345 Ω V
GS
= 10V, I
D
= 6.0A
V
GS(th)
Gate Threshold Voltage 2.0 — 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 1.5 — — S ( )V
DS
> 15V, I
DS
= 3.5A ➃
I
DSS
Zero Gate Voltage Drain Current — — 25 V
DS
= 0.8 x Max Rating,V
GS
= 0V
— — 250 V
DS
= 0.8 x Max Rating
V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Leakage Forward — — 100 V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse — — -100 V
GS
= -20V
Q
g
Total Gate Charge 7.7 — 17 V
GS
= 10V, I
D
= 6.0A
Q
gs
Gate-to-Source Charge 0.7 — 4.0 V
DS
= Max. Rating x 0.5
Q
gd
Gate-to-Drain (“Miller”) Charge 2.0 — 7.7 see figures 6 and 13
t
d(on)
Turn-On Delay Time — — 40 V
DD
= 50V, I
D
= 6.0A,
t
r
Rise Time — — 70 R
G
= 7.5Ω, VGS = 10V
t
d(off)
Turn-Off Delay Time — — 40
t
f
Fall Time — — 70 see figure 10
L
D
Internal Drain Inductance — 5.0 —
L
S
Internal Source Inductance — 15 —
C
iss
Input Capacitance — 350 — V
GS
= 0V, V
DS
= 25V
C
oss
Output Capacitance — 150 — f = 1.0 MHz
C
rss
Reverse Transfer Capacitance — 24 — see figure 5
JANTX2N6788, JANTXV2N6788 Device
Ω
➃
µA
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
nA
A
Next Data SheetIndex
Previous Datasheet
