TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/464
Devices Qualified Level
2N5685 2N5686
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol
2N5685 2N5686
Units
Collector-Emitter Voltage
V
CEO
60 80 Vdc
Collector-Base Voltage
V
CBO
60 80 Vdc
Emitter-Base Voltage
V
EBO
5.0 Vdc
Base Current I
B
15 Adc
Collector Current
I
C
50 Adc
Total Power Dissipation @ T
C
= +25
0
C
(1)
@ T
C
= +100
0
C
(1)
P
T
300
171
W
W
Operating & Storage Junction Temperature Range
T
J
,
T
stg
-55 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
.0584
0
C/W
1) Derate linearly 1.715 W/
0
C between T
C
= 25
0
C and T
C
= 200
0
C
TO-3*
(TO-204AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc 2N5685
2N5686
V
(BR)
CEO
60
80
Vdc
Collector-Emitter Cutoff Current
V
CE
= 30 Vdc 2N5685
V
CE
= 40 Vdc 2N5686
I
CEO
500
500
µAdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc 2N5685
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc 2N5686
I
CEX
500
500
µAdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc 2N5685
V
CB
= 80 Vdc 2N5686
I
CBO
2.0
2.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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