TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/518

Devices Qualified Level

2N3766 2N3767

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings Symbol 2N3766 2N3767 Units

Collector-Emitter Voltage

V

CEO

60 80 Vdc

Collector-Base Voltage

V

CBO

80 100 Vdc

Emitter-Base Voltage

V

EBO

6.0 Vdc

Base Current I

B

2.0 Adc

Collector Current

I

C

4.0 Adc

Total Power Dissipation @ T

C

= +25

0

C

(1)

P

T

25 W

Operating & Storage Temperature Range

T

op

,

T

stg

-65 to +200

0

C

THERMAL CHARACTERISTICS

Characteristics Symbol Max. Unit

Thermal Resistance, Junction-to-Case

R

θJC

7.0

0

C/W

1) Derate linearly 143 mW/

0

C between T

C

= +25

0

C and T

C

= +200

0

C

TO-66*

(TO-213AA)

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS (T

C

= 25

0

C unless otherwise noted)

Characteristics Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I

C

= 100 mAdc 2N3766

2N3767

V

(BR)

CEO

60

80

Vdc

Collector-Emitter Cutoff Current

V

CE

= 60 Vdc 2N3766

V

CE

= 80 Vdc 2N3767

I

CEO

500

µAdc

Collector-Emitter Cutoff Current

V

CE

= 80 Vdc, V

BE

= 1.5 Vdc 2N3766

V

CE

= 100 Vdc, V

BE

= 1.5 Vdc 2N3767

I

CEX

10

µAdc

Collector-Base Cutoff Current

V

CB

= 80 Vdc 2N3766

V

CB

= 100 Vdc 2N3767

I

CBO

10

µAdc

Emitter-Base Cutoff Current

V

EB

= 6.0 Vdc

I

EBO

500

µAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

2N3766, 2N3767 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics Symbol Min. Max. Unit

ON CHARACTERISTICS

(2)

Forward-Current Transfer Ratio

I

C

= 50 mAdc, V

CE

= 5.0 Vdc

I

C

= 500 mAdc, V

CE

= 5.0 Vdc

I

C

= 1.0 Adc, V

CE

= 10 Vdc

h

FE

30

40

20

160

Collector-Emitter Saturation Voltage

I

C

= 1.0 Adc, I

B

= 0.1 Adc

I

C

= 0.5 Adc, I

B

= 0.05 Adc

V

CE(sat)

2.5

1.0

Vdc

Base-Emitter Voltage

I

C

= 1.0 Adc, V

CE

= 10 Vdc

V

BE(on)

1.5 Vdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

I

C

= 500 mAdc, V

CE

= 10 Vdc, f = 10 MHz

h

fe



1.0

8.0

Output Capacitance

V

CB

= 10 Vdc, I

E

= 0, 0.1 MHz ≤ f ≤ 1.0 MHz

C

obo

50 pF

SWITCHING CHARACTERISTICS

Turn-On Time

V

CC

= 30 Vdc; I

C

= 0.5 Adc; I

B

= 0.05 Adc

t

on

0.25

µs

Turn-Off Time

V

CC

= 30 Vdc; I

C

= 0.5 Adc; I

B

= I

B

= 0.05 Adc

t

off

2.5

µs

SAFE OPERATING AREA

DC Tests

T

C

= +25

0

C, 1 Cycle, t = 1.0 s

Test 1

V

CE

= 6.25 Vdc, I

C

= 4.0 Adc

Test 2

V

CE

= 20 Vdc, I

C

= 1.25 Adc

Test 3

V

CE

= 50 Vdc, I

C

= 150 mAdc 2N3766

V

CE

= 65 Vdc, I

C

= 150 mAdc 2N3767

(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

Part #	JANTX2N3766
Description	TRANS GP BJT NPN 60V 4A 3PINTO-66 - Bulk
Category	TRANSISTOR
Availability	In Stock
Qty	3

Qty	Price
1 - 2	$30.19788
3 +	$22.87718

Manufacturer	Available	Qty
Microsemi Corp Date Code: 0450	Freelance Stock: 2 Ships Immediately
Motorola Corp	Freelance Stock: 1 Ships Immediately

JANTX2N3766

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