RAYTHEON SYSTEMS JANTX2N2222A

Cross Number:

Item Description: Trans GP BJT NPN 50V 800MaThru Hole TO-18 3 Pins
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Qty Price
1 - 45 $3.30000
46 - 114 $2.62500
115 - 222 $2.47500
223 - 336 $2.30000
337 + $2.05000





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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 1
1 Publication Order Number:
2N2222A/D
2N2222A
Small Signal Switching
Transistor
NPN Silicon
Features
MILPRF19500/255 Qualified
Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Value Unit
CollectorEmitter Voltage V
CEO
50 Vdc
CollectorBase Voltage V
CBO
75 Vdc
EmitterBase Voltage V
EBO
6.0 Vdc
Collector Current Continuous I
C
800 mAdc
Total Device Dissipation @ T
A
= 25°C P
T
500 mW
Total Device Dissipation @ T
C
= 25°C P
T
1.0 W
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to
+200
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
325 °C/W
Thermal Resistance, Junction to Case
R
q
JC
150 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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COLLECTOR
3
2
BASE
1
EMITTER
TO18
CASE 206AA
STYLE 1
Device Package Shipping
ORDERING INFORMATION
JAN2N2222A
JANTX2N2222A TO18 Bulk
JANTXV2N2222A
2N2222A
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2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 10 mAdc)
V
(BR)CEO
50 Vdc
CollectorBase Cutoff Current
(V
CB
= 75 Vdc)
(V
CB
= 60 Vdc)
I
CBO
10
10
mAdc
nAdc
EmitterBase Cutoff Current
(V
EB
= 6.0 Vdc)
(V
EB
= 4.0 Vdc)
I
EBO
10
10
mAdc
nAdc
CollectorEmitter Cutoff Current
(V
CE
= 50 Vdc)
I
CES
50 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 150 mAdc, V
CE
= 10 Vdc)
(I
C
= 500 mAdc, V
CE
= 10 Vdc)
h
FE
50
75
100
100
30
325
300
CollectorEmitter Saturation Voltage
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
0.3
1.0
Vdc
BaseEmitter Saturation Voltage
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.6
1.2
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
Magnitude of SmallSignal Current Gain
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
|h
fe
|
2.5
SmallSignal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1 kHz)
h
fe
50
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz f 1.0 MHz)
C
ibo
25
pF
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0,100 kHz f 1.0 MHz )
C
obo
8.0
pF
SWITCHING (SATURATED) CHARACTERISTICS
TurnOn Time
(Reference Figure in MILPRF19500/255)
t
on
35 ns
TurnOff Time
(Reference Figure in MILPRF19500/255)
t
off
300 ns
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
2N2222A
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3
PACKAGE DIMENSIONS
TO18 3
CASE 206AA
ISSUE A
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
R
F
B
C
K
L
P
D3X
M
H
J
S
B0.007 (0.18MM) C
M
A
N
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 0.209 0.2305.31 5.84
B 0.178 0.1954.52 4.95
C 0.170 0.2104.32 5.33
D 0.016 0.0210.41 0.53
E --- 0.030--- 0.76
F 0.016 0.0190.41 0.48
N 0.100 BSC2.54 BSC
H 0.036 0.0460.91 1.17
J 0.028 0.0480.71 1.22
K 0.500 0.75012.70 19.05
L 0.250 ---6.35 ---
M 45 BSC45 BSC
R 0.054 BSC1.37 BSC
P --- 0.050--- 1.27
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
T --- 0.030--- 0.76
U 0.100 ---2.54 ---
A
B
A
DETAIL X
U
NOTE 5
NOTES 4 & 6
C
U
E
2
31
DETAIL X
NOTE 7
T
LEAD IDENTIFICATION
DETAIL
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2N2222A/D
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