International Rectifier JANSH2N7261

Cross Number:

Item Description: HIREL HEXFET RHD QPL , FDS ONLY - Bulk

Qty Price
1 + $100.00000



Other Cross Reference

Manufacturer Date Code Qty Available Qty
International Rectifier 9452
  • Freelance Stock: 1
    Ships Immediately





Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

o
C
Absolute Maximum Ratings
Parameter IRHF7130, IRHF8130 Units
I
D
@ V
GS
= 12V, T
C
= 25°C Continuous Drain Current 8.0
I
D
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current 5.0
I
DM
Pulsed Drain Current 32
P
D
@ T
C
= 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.20 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy 130 mJ
dv/dt Peak Diode Recovery dv/dt 5.5
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 0.98 (typical) g
Product Summary
Part Number BVDSS RDS(on) ID
IRHF7130 100V 0.18 8.0A
IRHF8130 100V 0.18 8.0A
Features:
n Radiation Hardened up to 1 x 10
6
Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
PD - 90653B
Pre-Irradiation
100Volt, 0.18
, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x10
6
Rads(Si). Under
identical pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical electrical specifications up to 1 x 10
5
Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 10
12
Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTOR
www.irf.com 1
10/14/98
N CHANNEL
MEGA RAD HARD
JANSH2N7261
IRHF7130
JANSR2N7261
IRHF8130
2 www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 100 V V
GS
= 0V, I
D
= 1.0mA
BV
DSS
/T
J
Temperature Coefficient of Breakdown 0.10 V/°C Reference to 25°C, I
D
= 1.0mA
Voltage
R
DS(on)
Static Drain-to-Source On-State 0.18 V
GS
= 12V, I
D
= 5.0A
Resistance 0.185 V
GS
= 12V, I
D
= 8.0A
V
GS(th)
Gate Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 1.0mA
g
fs
Forward Transconductance 2.5 S ( )V
DS
> 15V, I
DS
= 5.0A
I
DSS
Zero Gate Voltage Drain Current 25 V
DS
= 0.8 x Max Rating,V
GS
=0V
250 V
DS
= 0.8 x Max Rating
V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Leakage Forward 100 V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse -100 V
GS
= -20V
Q
g
Total Gate Charge 50 V
GS
=12V, I
D
= 8.0A
Q
gs
Gate-to-Source Charge 12 nC V
DS
= Max Rating x 0.5
Q
gd
Gate-to-Drain (‘Miller’) Charge 20
t
d(on)
Turn-On Delay Time 25 V
DD
= 50V, I
D
= 8.0A,
t
r
Rise Time 55 R
G
= 7.5
t
d(off)
Turn-Off Delay Time 55
t
f
Fall Time 45
L
D
Internal Drain Inductance 5.0
L
S
Internal Source Inductance 15
C
iss
Input Capacitance 1100 V
GS
= 0V, V
DS
= 25V
C
oss
Output Capacitance 310 pF f = 1.0MHz
C
rss
Reverse Transfer Capacitance 55
Pre-Irradiation
nA
nH
ns
µA
Measured from drain
lead, 6mm (0.25 in)
from package to center
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
Modified MOSFET
sym-
bol showing the internal
inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
S
Continuous Source Current (Body Diode) 8.0
I
SM
Pulse Source Current (Body Diode) —— 32
V
SD
Diode Forward Voltage 1.5 V T
j
= 25°C, I
S
= 8.0A, V
GS
= 0V
t
rr
Reverse Recovery Time 350 ns T
j
= 25°C, I
F
= 8.0A, di/dt 100A/µs
Q
RR
Reverse Recovery Charge 3.0 µCV
DD
50V
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
S
+ L
D
.
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
Junction-to-Case 5.0
R
th-JA
Junction-to-Ambient 175 Typical socket mount
°C/W
IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices
www.irf.com 3
Radiation Performance of Rad Hard HEXFETs
Table 1. Low Dose Rate IRHF7130 IRHF8130
Parameter
100K Rads (Si) 1000K Rads (Si)
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 100
V
V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage 2.0 4.0 1.25 4.5 V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward 100 100
nA
V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse -100 -100 V
GS
= -20 V
I
DSS
Zero Gate Voltage Drain Current 25 50 µA V
DS
=0.8 x Max Rating, V
GS
=0V
R
DS(on)1
Static Drain-to-Source 0.18 0.24 V
GS
= 12V, I
D
= 5.0A
On-State Resistance One
V
SD
Diode Forward Voltage 1.5 1.5 V T
C
= 25°C, I
S
=8.0A,V
GS
= 0V
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 5 and a V
DS
bias condition equal to 80% of the
device rated voltage per note 6. Pre- and post- irra-
diation limits of the devices irradiated to 1 x 10
5
Rads
(Si) are identical and are presented in Table 1, col-
umn 1, IRHF7130. Post-irradiation limits of the devices
irradiated to 1 x 10
6
Rads (Si) are presented in Table
1, column 2, IRHF8130. The values in Table 1 will be
met for either of the two low dose rate test circuits that
are used. Both pre- and post-irradiation performance
are tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec (See Table 2)
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Radiation Characteristics
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Parameter Min Typ Max Min Typ Max Units Test Conditions
V
DSS
Drain-to-Source Voltage 80 80 V Applied drain-to-source voltage during
gamma-dot
I
PP
100 100 A Peak radiation induced photo-current
di/dt 800 160 A/µsec Rate of rise of photo-current
L
1
0.1 0.5 µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects
LET (Si) Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (µm) (V) (V)
Cu 28 3x 10
5
~43 100 -5
IRHF7130, IRHF8130,
JANSR-,JANSH-,2N7261 Devices
1234NEXT

Freelance Electronics
13197 Sandoval Street
Santa Fe Springs, CA 90670

Hours of Operation
Monday-Friday 7:30am-4:30pm PST
(Deadline for next day shipment 2:00pm PST)

Trustworthy Standards Serving the Electronic Components
Industry since 1986

Government Cage code#-1V4R6
Duns Number# 788130532
Certified Small Disadvantaged Business