International Rectifier JANSG2N7268

Cross Number:

Item Description: HIREL HEXFET RHD QPL - Bulk

Qty Price
1 - 1 $198.00000
2 - 3 $154.50000
4 - 7 $135.00000
8 - 15 $130.50000
16 + $117.00000



Other Cross Reference

Manufacturer Date Code Qty Available Qty
International Rectifier 9424
  • Freelance Stock: 3
    Ships Immediately


International Rectifier 9600
  • Freelance Stock: 66
    Ships Immediately





Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Absolute Maximum RatingsAbsolute Maximum Ratings
Absolute Maximum RatingsAbsolute Maximum Ratings
Absolute Maximum Ratings
ParameterParameter
ParameterParameter
Parameter
UnitsUnits
UnitsUnits
Units
I
D
@ V
GS
= 12V, T
C
= 25°C Continuous Drain Current 34
I
D
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current 21
I
DM
Pulsed Drain Current 136
P
D
@ T
C
= 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy 500 mJ
I
AR
Avalanche Current 34 A
E
AR
Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 5.5
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 9.3 (Typical) g
PD - 90675C
Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation
International Rectifiers RADHard HEXFET
®
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
o
C
A
RADIATION HARDENEDRADIATION HARDENED
RADIATION HARDENEDRADIATION HARDENED
RADIATION HARDENED
POWER MOSFETPOWER MOSFET
POWER MOSFETPOWER MOSFET
POWER MOSFET
THRU-HOLE (TO-254AA)THRU-HOLE (TO-254AA)
THRU-HOLE (TO-254AA)THRU-HOLE (TO-254AA)
THRU-HOLE (TO-254AA)
8/14/01
www.irf.com 1
IRHM7150IRHM7150
IRHM7150IRHM7150
IRHM7150
JANSR2N7268 JANSR2N7268
JANSR2N7268 JANSR2N7268
JANSR2N7268
100V, N-CHANNEL100V, N-CHANNEL
100V, N-CHANNEL100V, N-CHANNEL
100V, N-CHANNEL
REF: MIL-PRF-19500/603REF: MIL-PRF-19500/603
REF: MIL-PRF-19500/603REF: MIL-PRF-19500/603
REF: MIL-PRF-19500/603
RAD HardRAD Hard
RAD HardRAD Hard
RAD Hard
HEXFETHEXFET
HEXFETHEXFET
HEXFET
®
TECHNOLOGYTECHNOLOGY
TECHNOLOGYTECHNOLOGY
TECHNOLOGY
Product SummaryProduct Summary
Product SummaryProduct Summary
Product Summary
Part Number Radiation Level Part Number Radiation Level
Part Number Radiation Level Part Number Radiation Level
Part Number Radiation Level
R R
R R
R
DS(on)DS(on)
DS(on)DS(on)
DS(on)
II
II
I
DD
DD
D
QPL Part NumberQPL Part Number
QPL Part NumberQPL Part Number
QPL Part Number
IRHM7150 100K Rads (Si) 0.065 34A JANSR2N7268
IRHM3150 300K Rads (Si) 0.065 34A JANSF2N7268
IRHM4150 600K Rads (Si) 0.065 34A JANSG2N7268
IRHM8150 1000K Rads (Si) 0.065 34A JANSH2N7268
Features:Features:
Features:Features:
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Eyelets
! Light Weight
For footnotes refer to the last page
TO-254AATO-254AA
TO-254AATO-254AA
TO-254AA
2 www.irf.com
IRHM7150IRHM7150
IRHM7150IRHM7150
IRHM7150
Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation
Electrical CharacteristicsElectrical Characteristics
Electrical CharacteristicsElectrical Characteristics
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)@ Tj = 25°C (Unless Otherwise Specified)
@ Tj = 25°C (Unless Otherwise Specified)@ Tj = 25°C (Unless Otherwise Specified)
@ Tj = 25°C (Unless Otherwise Specified)
ParameterParameter
ParameterParameter
Parameter
MinMin
MinMin
Min
TypTyp
TypTyp
Typ
MaxMax
MaxMax
Max
UnitsUnits
UnitsUnits
Units
Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 100 V V
GS
=0 V, I
D
= 1.0mA
BV
DSS
/T
J
Temperature Coefficient of Breakdown 0.13 V/°C Reference to 25°C, I
D
= 1.0mA
Voltage
R
DS(on)
Static Drain-to-Source 0.065 V
GS
= 12V, I
D
= 21A
On-State Resistance 0.076
V
GS
= 12V, I
D
= 34A
V
GS(th)
Gate Threshold Voltage 2.0 4.0 V V
DS
= V
GS
, I
D
= 1.0mA
g
fs
Forward Transconductance 8.0 S ( )V
DS
> 15V, I
DS
= 21A "
I
DSS
Zero Gate Voltage Drain Current 25 V
DS
= 80V,V
GS
=0V
250 V
DS
= 80V
V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Leakage Forward 100 V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse -100 V
GS
= -20V
Q
g
Total Gate Charge 160 V
GS
= 12V, I
D
= 34A
Q
gs
Gate-to-Source Charge 35 nC V
DS
= 50V
Q
gd
Gate-to-Drain (Miller) Charge 65
t
d(on)
Turn-On Delay Time 45 V
DD
= 50V, I
D
= 14A,
t
r
Rise Time 190 V
GS
= 12V, R
G
= 2.35
t
d(off)
Turn-Off Delay Time 170
t
f
Fall Time 130
L
S +
L
D
Total Inductance 6.8
C
iss
Input Capacitance 4300 V
GS
= 0V, V
DS
= 25V
C
oss
Output Capacitance 1200 pF f = 1.0MHz
C
rss
Reverse Transfer Capacitance 200
nA
"
nH
ns
µA
Note: Corresponding Spice and Saber models are available on the G&S Website.Note: Corresponding Spice and Saber models are available on the G&S Website.
Note: Corresponding Spice and Saber models are available on the G&S Website.Note: Corresponding Spice and Saber models are available on the G&S Website.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal ResistanceThermal Resistance
Thermal ResistanceThermal Resistance
Thermal Resistance
ParameterParameter
ParameterParameter
Parameter
MinMin
MinMin
Min
TypTyp
TypTyp
Typ
MaxMax
MaxMax
Max
UnitsUnits
UnitsUnits
Units
Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
R
thJC
Junction-to-Case 0.83
R
thCS
Case-to-sink 0.21
R
thJA
Junction-to-Ambient 48 Typical socket mount
°C/W
Source-Drain Diode Ratings and CharacteristicsSource-Drain Diode Ratings and Characteristics
Source-Drain Diode Ratings and CharacteristicsSource-Drain Diode Ratings and Characteristics
Source-Drain Diode Ratings and Characteristics
ParameterParameter
ParameterParameter
Parameter
MinMin
MinMin
Min
TypTyp
TypTyp
Typ
MaxMax
MaxMax
Max
UnitsUnits
UnitsUnits
Units
Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
I
S
Continuous Source Current (Body Diode) 34
I
SM
Pulse Source Current (Body Diode) 136
V
SD
Diode Forward Voltage 1.4 V T
j
= 25°C, I
S
= 34A, V
GS
= 0V
t
rr
Reverse Recovery Time 570 nS T
j
= 25°C, I
F
= 34A, di/dt 100A/µs
Q
RR
Reverse Recovery Charge 5.8 µC V
DD
50V
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
S
+ L
D
.
A
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
www.irf.com 3
Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation
IRHM7150IRHM7150
IRHM7150IRHM7150
IRHM7150
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
ParameterParameter
ParameterParameter
Parameter 100K Rads(Si)
300 to 1000K Rads (Si)
UU
UU
U
nitsnits
nitsnits
nits
Test Conditions Test Conditions
Test Conditions Test Conditions
Test Conditions
Min Min
Min Min
Min
Max Max
Max Max
Max
Min Max Min Max
Min Max Min Max
Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100  100
V
V
GS
= 0V, I
D
= 1.0mA
V
/5JD
Gate Threshold Voltage# 2.0 4.0 1.25 4.5 V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward 100  100
nA
V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse -100  -100 V
GS
= -20 V
I
DSS
Zero Gate Voltage Drain Current 25  50 µA V
DS
=80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source# 0.065 0.09 V
GS
= 12V, I
D
=21A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source# 0.065 0.09 V
GS
= 12V, I
D
=21A
On-State Resistance (TO-254AA)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation CharacteristicsRadiation Characteristics
Radiation CharacteristicsRadiation Characteristics
Radiation Characteristics
1. Part number IRHM7150 (JANSR2N7268)
2. Part numbers IRHM3150 (JANSF2N7268), IRHM4150 (JANSG2N7268) and IRHM8150 (JANSH2N7268)
Fig a.Fig a.
Fig a.Fig a.
Fig a. Single Event Effect, Safe Operating Area
V
SD
Diode Forward Voltage# 1.4  1.4 V V
GS
= 0V, I
S
= 34A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating AreaTable 2. Single Event Effect Safe Operating Area
Table 2. Single Event Effect Safe Operating AreaTable 2. Single Event Effect Safe Operating Area
Table 2. Single Event Effect Safe Operating Area
Ion LETIon LET
Ion LETIon LET
Ion LET
Energy RangeEnergy Range
Energy RangeEnergy Range
Energy Range
VDS(V)VDS(V)
VDS(V)VDS(V)
VDS(V)
MeV/(mg/cm
)) (MeV) (µm)
@VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V
@VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V
@VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V
Cu 28 285 43 100 100 100 80 60
Br 36.8 305 39 100 90 70 50
0
20
40
60
80
100
120
0 -5 -10 -15 -20 -25
VGS
VDS
Cu
Br
1234NEXT

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