4-108
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
IRFF9220 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
-200 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-200 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
-2.5 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
-10 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
20 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16 W/
o
C
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
290 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= -250µA, V
GS
= 0V, (Figure 10) -200 - - V
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= -250µA -2 - -4 V
Zero Gate Voltage Drain Current I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V - - -25 µA
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C - - -250 µA
On-State Drain Current (Note 2) I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= -10V -2.5 - - A
Gate to Source Leakage Current I
GSS
V
GS
= ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) r
DS(ON)
I
D
= 1.5A, V
GS
= -10V, (Figures 8, 9) - 1.0 1.5 Ω
Forward Transconductance (Note 2) g
fs
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 1.5A,
(Figure 12)
1 1.8 - S
Turn-On Delay Time t
d(ON)
V
DD
= 0.5 x Rated BV
DSS
, I
D
= -2.5A, R
GS
= 9.1Ω,
R
L
= 38.5Ω for BV
DSS
= -200V
R
L
= 28.5Ω for BV
DSS
= -150V
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
-1540ns
Rise Time t
r
-2550ns
Turn-Off Delay Time t
d(OFF)
- 80 120 ns
Fall Time t
f
-5075ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= -10V, I
D
= -2.5A, V
DS
= 0.8 x Rated BV
DSS
I
G(REF)
= -1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-1622nC
Gate to Source Charge Q
gs
-9-nC
Gate to Drain “Miller” Charge Q
gd
-7-nC
Input Capacitance C
ISS
V
DS
= -25V, V
GS
= 0V, f = 1MHz, (Figure 11) - 350 - pF
Output Capacitance C
OSS
- 100 - pF
Reverse Transfer Capacitance C
RSS
-30- pF
Internal Drain Inductance L
D
Measured From the Drain
Lead, 5mm (0.2in) From
Header To Center of Die
Modified MOSFET
Symbol Showing the In-
ternal Devices
Inductances
- 5.0 - nH
Internal Source Inductance L
S
Measured From the Source
Lead, 5mm (0.2in) From
Header to Source Bonding
Pad
-15- nH
Thermal Resistance Junction to Case R
θJC
- - 6.25
o
C/W
Thermal Resistance
Junction to Ambient
R
θJA
Typical Socket Mount - - 175
o
C/W
L
S
L
D
G
D
S
IRFF9220
