2
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
IRFF230 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
200 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
200 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
5.5 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
22 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
25 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
85 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
V
GS
= 0V, I
D
= 250µA (Figure 10) 200 - - V
Gate to Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA 2.0 - 4.0 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V - - 25 µA
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C - - 250 µA
On-State Drain Current (Note 2) I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V (Figure 7) 5.5 - - A
Gate to Source Leakage Forward I
GSS
V
GS
= ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) r
DS(ON)
V
GS
= 10V, I
D
= 3.0A (Figures 8, 9) - 0.25 0.4 Ω
Forward Transconductance (Note 2) g
fs
V
DS
>I
D(ON) x
r
DS(ON)MAX
, I
D
= 3.0A (Figure 12) 2.5 4.5 - S
Turn-On Delay Time t
d(ON)
V
DD
≅ 0.5 x Rated BV
DSS
, I
D
≈ 5.5A, R
G
= 9.1Ω,
V
GS
= 10V, R
L
= 28.7Ω For V
DSS
= 160V,
R
L
= 21.4Ω For V
DSS
= 120V (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
- - 30 ns
Rise Time t
r
- - 50 ns
Turn-Off Delay Time t
d(OFF)
- - 50 ns
Fall Time t
f
- - 40 ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 5.5A, V
DS
= 0.8 x Rated B
VDSS
,
I
G(REF)
= 1.5mA (Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating Temperature
-1930nC
Gate to Source Charge Q
gs
-10-nC
Gate to Drain “Miller” Charge Q
gd
- 9.0 - nC
Input Capacitance C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11) - 600 - pF
Output Capacitance C
OSS
- 250 - pF
Reverse-Transfer Capacitance C
RSS
-80- pF
Internal Drain Inductance L
D
Measured from the Drain
Lead, 5mm (0.2in) from
Header to Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
- 5.0 - nH
Internal Source Inductance L
S
Measured from the
Source Lead, 5mm
(0.2in) from Header to
Source Bonding Pad
-15-nH
Junction to Case R
θJC
- - 5.0
o
C/W
Junction to ambient R
θJA
- - 175
o
C/W
L
D
L
S
D
S
G
IRFF230
