Name: IRF3205
SKU: IRF3205
Price: 1.81918 USD
Availability: OutOfStock

IRF3205

4 www.irf.com

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

1 10 100

V

DS

, Drain-to-Source Voltage (V)

0

1000

2000

3000

4000

5000

6000

C, Capacitance(pF)

Coss

Crss

Ciss

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0 20 40 60 80 100 120

0

2

4

6

8

10

12

14

16

Q , Total Gate Char

g

e (nC)

V , Gate-to-Source Voltage (V)

G

GS

I =

D

62A

V = 11V

DS

V = 27V

DS

V = 44V

DS

1

10

100

1000

10000

1 10 100 1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Sin

g

le Pulse

T

= 175 C

= 25 C

°

J

C

V , Drain-to-Source Volta

g

e (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

10us

100us

1ms

10ms

0.1

1

10

100

1000

0.2 0.8 1.4 2.0 2.6

V ,Source-to-Drain Volta

g

e (V)

I , Reverse Drain Current (A)

SD

V = 0 V

GS

T = 25 C

J

°

T = 175 C

J

°

IRF3205

www.irf.com 5

R

D

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

V

GS

R

G

D.U.T.

10V

+

-

25 50 75 100 125 150 175

0

20

40

60

80

100

120

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

V

GS

R

G

D.U.T.

10V

V

DD

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

J DM thJC C



P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response(Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRF3205

6 www.irf.com

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(BR)DSS

I

AS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

25 50 75 100 125 150 175

0

100

200

300

400

500

Startin

g

T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°



I

D

TOP

BOTTOM

25A

44A

62A

Part #	IRF3205
Description	Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-220AB - Rail/Tu
Category	TRANSISTOR
Availability	Out of Stock
Qty	0

IRF3205

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