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1306N2

Part # 1306N2
Description
Category TRANSISTOR
Availability Out of Stock
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Qty Price
1 + $28.99018

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

7-191
7
VN1304
VN1306
VN1310
N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
DSS
/R
DS(ON)
I
D(ON)
Order Number / Package
BV
DGS
(max) (min) TO-39 TO-92
40V 8.0Ω 0.5A — —
60V 8.0Ω 0.5A VN1306N2 —
100V 8.0Ω 0.5A — VN1310N3
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
Package Options
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage BV
DSS
Drain-to-Gate Voltage BV
DGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
S G D
D
G
S
TO-39
TO-92
Ordering Information
Case: DRAIN
7-192
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Package I
D
(continuous)* I
D
(pulsed) Power Dissipation
θ
jc
θ
ja
I
DR
*I
DRM
@ T
C
= 25°C °C/W °C/W
TO-39 0.4A 1.4A 3.0W 41 125 0.4A 1.4A
TO-92 0.25A 1.3A 1.0W 125 170 0.25A 1.3A
*
I
D
(continuous) is limited by max rated T
j.
Thermal Characteristics
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
VN1310 100
VN1306 60 V V
GS
= 0V, I
D
= 1mA
VN1304 40
V
GS(th)
Gate Threshold Voltage 0.8 2.4 V V
GS
= V
DS
, I
D
= 1mA
∆V
GS(th)
Change in V
GS(th)
with Temperature -3.9 -5.0 mV/°CV
GS
= V
DS
, I
D
= 1mA
I
GSS
Gate Body Leakage 100 nA V
GS
= ±20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current 1 µAV
GS
= 0V, V
DS
= Max Rating
100 µAV
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
I
D(ON)
ON-State Drain Current 0.25 0.6 V
GS
= 5V, V
DS
= 25V
0.50 1.4 V
GS
= 10V, V
DS
= 25V
R
DS(ON)
5.0 15 V
GS
= 5V, I
D
= 50mA
5.0 8.0 V
GS
= 10V, I
D
= 500mA
∆R
DS(ON)
Change in R
DS(ON)
with Temperature 0.8 2 %/°CV
GS
= 10V, I
D
= 500mA
G
FS
Forward Transconductance 120 m V
DS
= 25V, I
D
= 500mA
C
ISS
Input Capacitance 27 35
C
OSS
Common Source Output Capacitance 13 15 pF
C
RSS
Reverse Transfer Capacitance 3 5
t
d(ON)
Turn-ON Delay Time 2 5
t
r
Rise Time 2 5
t
d(OFF)
Turn-OFF Delay Time 2 6
t
f
Fall Time 2 5
V
SD
Diode Forward Voltage Drop 1.0 1.3 V V
GS
= 0V, I
SD
= 0.5A
t
rr
Reverse Recovery Time 350 ns V
GS
= 0V, I
SD
= 0.5A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Source
Breakdown Voltage
Ω
Static Drain-to-Source
ON-State Resistance
A
V
DD
= 25V
I
D
= 500mA
R
GEN
= 25Ω
ns
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
Switching Waveforms and Test Circuit
VN1304/VN1306/VN1310
Ω
7-193
7
8V
Output Characteristics
1.6
1.2
0.8
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
Saturation Characteristics
1.6
1.2
0.8
0.4
V
DS
(volts)
Maximum Rated Safe Operating Area
0.1 100101.0
0.1
1.0
10
.01
V
DS
(volts)
I
D
(amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1
t
p
(seconds)
Transconductance vs. Drain Current
0.4
0.3
0.2
0.1
0
0 2.00.4 0.8 1.2 1.6
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Ambient Temperature
0 15010050
2.5
2.0
1.5
1.0
0.5
0
1257525
T
A
(°C)
P
D
(watts)
TO-92
T
A
= -55°C
T
A
= 25°C
T
A
= 25°C
T
A
= 125°C
V
DS
= 25V
0102030 5040
V
GS
= 10V
0246 108
V
GS
= 10V
4V
2.0
8V
6V
4V
6V
TO-39
0
0
0
2.0
0.5
0.4
TO-92 (pulsed)
TO-92 (DC)
TO-39 (DC)
TO-39
(pulsed)
TO-39
P
D
= 3.5W
T
C
= 25°C
TO-92
P
D
= 1W
T
C
= 25°C
Typical Performance Curves
VN1304/VN1306/VN1310
12NEXT
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