SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - AUGUST 1995
PARTMARKING DETAILS
BCW65A EA BCW65AR 4V
BCW65B EB BCW65BR 5V
BCW65C EC BCW65CR 6V
BCW66F EF BCW66FR 7P
BCW66G EG BCW66GR 5T
BCW66H EH BCW66HR 7M
COMPLEMENTARY TYPES
BCW65 BCW67
BCW66 BCW68
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCW65 BCW66 UNIT
Collector-Base Voltage V
CBO
60 75 V
Collector-Emitter Voltage V
CEO
32 45 V
Emitter-Base Voltage V
EBO
5V
Continuous Collector Current I
C
800 mA
Peak Collector Current(10ms) I
CM
1000 mA
Base Current I
B
100 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
BCW65
BCW66
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BCW65
BCW66
V
(BR)CEO
32
45
VI
CEO
=10mA
I
CEO
=10mA
BCW65
BCW66
V
(BR)CES
60
75
V
I
C
=10µA
I
C
=10µA
Emitter-Base Breakdown Voltage V
(BR)EBO
5V
I
EBO
=10µA
Collector-Emitter
Cut-off Current
BCW65
BCW66
I
CES
20
20
20
20
nA
µA
nA
µA
V
CES
= 32V
V
CES
= 32V ,T
amb
=150
o
C
V
CES
= 45V
V
CES
= 45V ,T
amb
=150
o
C
Emitter-Base Cut-Off Current I
EBO
20 nA V
EBO
=4V
Collector-Emitter Saturation Voltage V
CE(sat)
0.3
0.7
V
V
I
C
=100mA, I
B
=
10mA
I
C
= 500mA, I
B
=50mA*
Base-Emitter Saturation Voltage V
BE(SAT)
2 V I
C
=500mA, I
B
=50mA*
Static
Forward
Current
Transfer
BCW65A
BCW66F
h
FE
35
75
100
35
160 250
I
C
=100µA, V
CE
=10V
I
C
= 10mA, V
CE
= 1V
I
C
=100mA, V
CE
= 1V*
I
C
=500mA, V
CE
= 2V*
BCW65B
BCW66G
h
FE
50
110
160
60
250 400
I
C
=100µA, V
CE
=10V
I
C
= 10mA, V
CE
= 1V
I
C
=100mA, V
CE
= 1V*
I
C
=500mA, V
CE
= 2V*
BCW65C
BCW66H
h
FE
80
180
250
100
350 630
I
C
=100µA, V
CE
=10V
I
C
= 10mA, V
CE
= 1V
I
C
=100mA, V
CE
= 1V*
I
C
=500mA, V
CE
= 2V*
Transition Frequency f
T
100 MHz I
C
=20mA, V
CE
=10V
f = 100MHz
Collector-Base Capacitance C
cbo
8 12pFV
CBO
=10V, f =1MHz
Emitter-Base Capacitance C
ebo
80 pF V
EBO
=0.5V, f =1MHz
Noise Figure N 2 10 dB I
C
= 0.2mA, V
CE
= 5V
R
G
=1kΩ
Switching times:
Turn-On Time
Turn-Off Time
t
on
t
off
100
400
ns
ns
I
C
=150mA
I
B1
=- I
B2
=15mA
R
L
=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
C
B
E
SOT23
BCW65
BCW66
3 - 28 3 - 27
