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74V1G00CTR

Part # 74V1G00CTR
Description NAND Gate 1-Element 2-IN CMOS5-Pin SOT-323 T/R - Tape and
Category TRANSISTOR
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825 - 1,249 $0.62002
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SGS Thomson
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1/9April 2004
■ HIGH SPEED: t
PD
= 3.7ns (TYP.) at V
CC
=5V
■ LOW POWER DISSIPATION:
I
CC
=1µA(MAX.) at T
A
=25°C
■ HIGH NOISE IMMUNITY:
V
NIH
=V
NIL
= 28% V
CC
(MIN.)
■ POWER DOWN PROTECTION ON INPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
|=I
OL
=8mA(MIN)atV
CC
=4.5V
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1G00 is an advanced high-speed CMOS
SINGLE 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
74V1G00
SINGLE 2-INPUT NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-5L 74V1G00STR
SOT323-5L 74V1G00CTR
SOT323-5LSOT23-5L
74V1G00
2/9
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
1) V
IN
from 30% to 70% of V
CC
PIN N° SYMBOL NAME AND FUNCTION
1 1A Data Input
2 1B Data Input
4 1Y Data Output
3 GND Ground (0V)
5
V
CC
Positive Supply Voltage
ABY
LLH
LHH
HLH
HHL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to V
CC
+0.5
V
I
IK
DC Input Diode Current
-20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC V
CC
or Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
260 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
2to5.5 V
V
I
Input Voltage
0to5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
=3.3± 0.3V)
(V
CC
=5.0± 0.5V)
0 to 100
0to20
ns/V
ns/V
74V1G00
3/9
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r
=t
f
=3ns)
(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
=C
PD
xV
CC
xf
IN
+I
CC
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
2.0 1.5 1.5 1.5
V
3.0 to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
V
IL
Low Level Input
Voltage
2.0 0.5 0.5 0.5
V
3.0 to
5.5
0.3V
CC
0.3V
CC
0.3V
CC
V
OH
High Level Output
Voltage
2.0
I
O
=-50 µA
1.9 2.0 1.9 1.9
V
3.0
I
O
=-50 µA
2.9 3.0 2.9 2.9
4.5
I
O
=-50 µA
4.4 4.5 4.4 4.4
3.0
I
O
=-4 mA
2.58 2.48 2.4
4.5
I
O
=-8 mA
3.94 3.8 3.7
V
OL
Low Level Output
Voltage
2.0
I
O
=50 µA
0.0 0.1 0.1 0.1
V
3.0
I
O
=50 µA
0.0 0.1 0.1 0.1
4.5
I
O
=50 µA
0.0 0.1 0.1 0.1
3.0
I
O
=4 mA
0.36 0.44 0.55
4.5
I
O
=8 mA
0.36 0.44 0.55
I
I
Input Leakage
Current
0to
5.5
V
I
=5.5VorGND
± 0.1 ± 1 ± 1 µA
I
CC
Quiescent Supply
Current
5.5
V
I
=V
CC
or GND
11020µA
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PLH
t
PHL
Propagation Delay
Time
3.3
(*)
15 5.0 7.9 1.0 9.5 1.0 10.5
ns
3.3
(*)
50 5.7 9.0 1.0 10.5 1.0 11.5
5.0
(**)
15 3.7 5.5 1.0 6.5 1.0 7.5
5.0
(**)
50 4.3 7.5 1.0 8.5 1.0 9.5
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
410 10 10pF
C
PD
Power Dissipation
Capacitance
(note 1)
11 pF
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