4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1 3
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
Notes:
* Indicates JEDEC registered data.
1. The current transfer ratio(I
C
/I
F
) is the ratio of the detector collector current to the LED input current with V
CE
@ 10V.
2. Pulse test: pulse width = 300µs, duty cycle
≤
2.0% .
4. I
F
adjusted to I
C
= 2.0mA and I
C
= 0.7mA rms.
5. The frequency at which I
C
is 3dB down from the 1kHz value.
6. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage* I
F
= 10mA – 1.2 1.5 V
I
R
Reverse Leakage Current* V
R
= 3.0V – 0.001 100 µA
C Capacitance* V
F
= 0V, f = 1.0MHz – 150 – pF
DETECTOR
BV
CEO
Collector-Emitter Breakdown Voltage* I
C
= 1.0mA, I
B
= 0 30 60 – V
BV
CBO
Collector-Base Breakdown Voltage* I
C
= 100µA, I
E
= 0 30 100 – V
BV
ECO
Emitter-Collector Breakdown Voltage* I
E
= 100µA, I
B
= 0 5.0 8 – V
I
CEO
Collector-Emitter Dark Current* V
CE
= 10V, Base Open – 1 100 nA
h
FE
DC Current Gain V
CE
= 5.0V, I
C
= 500µA – 5000 –
Symbol Parameter Test Conditions Min. Typ. Max. Unit
DC CHARACTERISTICS
I
C(CTR)
Collector Output Current*
(1, 2)
I
F
= 10mA, V
CE
= 10V, I
B
= 0
4N32, 4N33 50 (500) – – mA (%)
4N29, 4N30 10 (100) – –
4N31 5 (50) – –
V
CE(SAT)
Saturation Voltage*
(2)
I
F
= 8mA, I
C
= 2.0mA
4N29, 4N30, 4N32, 4N33 – – 1.0 V
4N31 – – 1.2
AC CHARACTERISTICS
t
on
Tur n-on Time I
F
= 200mA, I
C
= 50mA,
V
CC
= 10V
––5.0 µS
t
off
Tur n-off Time
4N32, 4N33 I
F
= 200mA, I
C
= 50mA,
V
CC
= 10V
–
– 100 µS
4N29, 4N30, 4N31
–
–40
BW
Bandwidth
(3, 4)
–
30 – kHz
Symbol Characteristic Test Conditions Min. Typ. Max. Units
V
ISO
Input-Output Isolation Voltage
(5)
4N29, 4N30, 4N31, 4N32, 4N33 I
I-O
≤
1µA, Vrms, t = 1min. 5300 – – Vac(rms)
4N32* VDC 2500 – – V
4N33* VDC 1500 – –
R
ISO
Isolation Resistance
(5)
V
I-O
= 500VDC – 10
11
–
Ω
C
ISO
Isolation Capacitance
(5)
V
I-O
= Ø, f = 1MHz – 0.8 – pF
