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FEATURES DESCRIPTION

APPLICATIONS

TPS718xx

TPS719xx

GND

EN1

EN2

OUT2

IN OUT1

OUT

1 Fm

TypicalApplicationCircuit

2.7V 6.5V- 0.9V 3.6V-

0.9V 3.6V-

Off

EN1

GND

EN2

OUT1

OUT2

TPS718xx,TPS719xx

DRVPackage

2mmx2mmSON

(TOPVIEW)

TPS718xx

TPS719xx

SBVS088A – FEBRUARY 2007 – REVISED MARCH 2007

Dual, 200mA Output, Low Noise, High PSRR

Low-Dropout Linear Regulators in 2mm x 2mm SON Package

• Dual, 200mA High-Performance LDOs

The TPS718xx and TPS719xx families of

low-dropout (LDO) regulators offer a high

• Low Total Quiescent Current: 90 µ A with Both

power-supply rejection ratio (PSRR), low noise, fast

LDOs Enabled

start-up, and excellent line and load transient

• Low Noise: 70 µ V

RMS

responses while consuming a very low 90 µ A (typical)

• Active Output Pulldown (TPS719xx)

at no load ground current with both LDOs enabled.

The TPS719xx also provides an active pulldown

• Independent Enables for Each LDO

circuit to quickly discharge output loads. The

• PSRR: 65dB at 1kHz, 45dB at 1MHz

TPS718xx and TPS719xx are stable with ceramic

• Available in Multiple Fixed-Output Voltage

capacitors and use an advanced BiCMOS fabrication

Combinations from 0.9V to 3.6V Using

process to yield a typical dropout voltage of 230mV

Innovative Factory EEPROM Programming

at 200mA output loads. The TPS718xx and

TPS719xx also use a precision voltage reference

• Fast Start-Up Time: 160 µ s

and feedback loop to achieve 3% overall accuracy

• Over-Current, Over-Temperature and

over all load, line, process, and temperature

Under-Voltage Protection

variations. Both families of devices are fully specified

• Low Dropout: 230mV at 200mA

from T

= –40 ° C to +125 ° C and are offered in a 2mm

× 2mm SON-6 package that is ideal for applications

• Stable with 1 µ F Ceramic Output Capacitor

such as mobile handsets and WLAN that require

• Available in 2mm × 2mm SON-6 Package

good thermal dissipation while maintaining a very

small footprint.

• Digital Cameras

• Cellular Camera Phones

• Wireless LAN, Bluetooth

• Handheld Products

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Bluetooth is a registered trademark of Bluetooth SIG, Inc.

All other trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

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ABSOLUTE MAXIMUM RATINGS

(1)

DISSIPATION RATINGS

TPS718xx

TPS719xx

SBVS088A – FEBRUARY 2007 – REVISED MARCH 2007

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be

more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

ORDERING INFORMATION

(1)

PRODUCT V

OUT

(2) (3)

TPS718 xx-yywwwz XX is nominal output voltage for LDO1 (for example, 28 = 2.8V).

TPS719 xx-yywwwz YY nominal output voltage for LDO2.

WWW is package designator.

Z is Tape & Reel quantity (R = 3000, T = 250).

Examples: TPS71918–285DRVR XX = 18 = 1.8V, YYY = 285 = 2.85V

TPS719185-33DRVR XXX = 185 = 1.85V, YY = 33 = 3.3V

DRV = 2mm x 2mm SON package

Z = R = 3000 piece reel

(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI

website at www.ti.com .

(2) Both outputs are programmable from 0.9V to 3.6V in 50mV increments.

(3) Output voltages from 0.9V to 3.6V in 50mV increments are available through the use of innovative factory EEPROM programming;

minimum order quantities may apply. Contact factory for details and availability.

Over operating temperature range (unless otherwise noted). All voltages are with respect to GND.

PARAMETER TPS718xx, TPS719xx UNIT

Input voltage range, V

–0.3 to +7.0 V

Enable voltage range, V

EN1

and V

EN2

–0.3 to V

+ 0.3V V

Output voltage range, V

OUT

–0.3 to +7.0 V

Peak output current Internally limited

Output short-circuit duration Indefinite

Junction temperature range, T

–55 to +150 ° C

Storage temperature range , T

STG

–55 to +150 ° C

Total continuous power dissipation, P

DISS

See Dissipation Ratings Table

ESD rating, HBM 2 kV

ESD rating, CDM 500 V

(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

DERATING FACTOR

BOARD PACKAGE R

θ JC

θ JA

ABOVE T

= +25 ° C T

< +25 ° C T

= +70 ° C T

= +85 ° C

High-K

(1)

DRV 20 ° C/W 95 ° C/W 10.53mW/ ° C 1053mW 579mW 421mW

(1) The JEDEC high-K (2s2p) board used to derive this data was a 3in × 3in, multilayer board with 1-ounce internal power and ground

planes and 2-ounce copper traces on top and bottom of the board.

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ELECTRICAL CHARACTERISTICS

TPS718xx

TPS719xx

SBVS088A – FEBRUARY 2007 – REVISED MARCH 2007

Over operating temperature range (T

= –40 ° C to +125 ° C), V

= V

OUT(TYP)

+ 0.5V or 2.7V, whichever is greater;

OUT

= 0.5mA, V

EN1

= V

EN2

= V

, C

OUT

= 1.0 µ F, unless otherwise noted. Typical values are at T

= +25 ° C.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Input voltage range

(1)

2.7 6.5 V

OUT1

, V

OUT2

Output voltage range 0.9 3.6 V

Nominal T

= +25 ° C ± 2.5 mV

OUT1

, V

OUT2

Output accuracy

Over V

, I

OUT

, V

OUT

+ 0.5V ≤ V

≤ 6.5V

–3.0 +3.0 %

Temp 0mA ≤ I

OUT

≤ 200mA

OUT(NOM)

+ 0.5V ≤ V

≤ 6.5V,

∆ V

OUT

/ ∆ V

Line regulation 130 µ V/V

OUT

= 5mA

∆ V

OUT

/ ∆ I

OUT

Load regulation 0mA ≤ I

OUT

≤ 200mA 75 µ V/mA

Dropout voltage

(2)

OUT

= 200mA 230 400 mV

= V

OUT(NOM)

– 0.1V)

Output current limit (per output) V

OUT

= 0.9 × V

OUT(NOM)

240 340 575 mA

OUT1

= I

OUT2

= 0.1mA 90 160 µ A

GND

Ground pin current

OUT1

= I

OUT2

= 200mA 250 µ A

EN1,2

≤ 0.4V, 2.7V ≤ V

< 4.5V,

0.3 3.0 µ A

= –40 ° C to +85 ° C

SHDN

Shutdown current (I

GND

)

EN1,2

≤ 0.4V, 4.5V ≤ V

≤ 6.5V,

1.8 µ A

= –40 ° C to +85 ° C

f = 100Hz 63 dB

f = 1kHz 63 dB

Power-supply rejection ratio

PSRR V

= 3.8V, V

OUT

= 2.8V, f = 10kHz 72 dB

OUT

= 200mA

f = 100kHz 58 dB

f = 1MHz 44 dB

Output noise voltage

70 × V

OUT

µ V

RMS

BW = 100Hz to 100kHz

= 14 Ω , V

OUT

= 2.8V,

STR

Startup time

(3)

160 µ s

OUT

= 1.0 µ F

Shutdown time

(4)

(5)

= ∞ , C

OUT

= 1.0 µ F,

SHUT

180 µ s

(TPS719xx only) V

OUT

= 2.8V

≤ 5.5V 1.2 6.5 V

Enable high (enabled)

EN(HI)

(EN1 and EN2)

5.5V < V

≤ 6.5V 1.25 6.5 V

Enable low (shutdown)

EN(LO)

0 0.4 V

(EN1 and EN2)

Enable pin current, enabled

EN1 = EN2 = 6.5V 0.04 1.0 µ A

(EN1 and EN2)

Under-voltage lockout V

rising 2.38 2.45 2.52 V

UVLO

Hysteresis V

falling 150 mV

Shutdown, temperature increasing +160 ° C

Thermal shutdown temperature

Reset, temperature decreasing +140 ° C

Operating junction temperature –40 +125 ° C

(1) Minimum V

= V

OUT

+ V

or 2.7V, whichever is greater.

(2) V

is not measured for devices with V

OUT(NOM)

< 2.8V because minimum V

= 2.7V.

(3) Time from V

= 1.25V to V

OUT

= 95% (V

OUT(NOM)

(4) Time from V

= 0.4V to V

OUT

= 5% (V

OUT(NOM)

(5) See Shutdown section in the Applications Information for more details.

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Part #	8185-1
Description
Category	TRANSISTOR
Availability	In Stock
Qty	33

Qty	Price
1 - 3	$40.55939
4 - 9	$32.26315
10 - 18	$30.41954
19 - 27	$28.26867
28 +	$25.19598

8185-1

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