NORTH HILLS ELECTRONICS 1116PA

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ALD1106/ALD1116
A
DVANCED
L
INEAR
D
EVICES,
I
NC.
QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
The ALD1106/ALD1116 are monolithic quad/dual N-channel enhance-
ment mode matched MOSFET transistor arrays intended for a broad range
of precision analog applications. The ALD1106/ALD1116 offer high input
impedance and negative current temperature coefficient. The transistor
pairs are matched for minimum offset voltage and differential thermal
response, and they are designed for precision analog switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. These
MOSFET devices feature very large (almost infinite) current gain in a low
frequency, or near DC, operating environment. The ALD1106/ALD1116
are building blocks for differential amplifier input stages, transmission
gates, and multiplexer applications, current sources and many precision
analog circuits.
APPLICATIONS
Precision current mirrors
Precision current sources
Voltage choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog signal processing
BLOCK DIAGRAM
FEATURES
Low threshold voltage of 0.7V
Low input capacitance
Low Vos 2mV typical
High input impedance -- 10
14
typical
Negative current (I
DS
) temperature coefficient
Enhancement-mode (normally off)
DC current gain 10
9
Low input and output leakage currents
RoHS compliant
PIN CONFIGURATION
D
N2
G
N2
S
N2
G
N1
S
N1
1
2
3
4
5
6
7
8
D
N1
V
+
V
-
ALD1116
D
N1
(1)
D
N2
(8)
~
G
N1
(2)
S
N1
(3) S
N2
(6)
V
+
(5)
V
-
(4)
G
N2
(7)
ALD1116
D
N2
G
N2
S
N2
G
N3
S
N3
G
N1
S
N1
D
N4
G
N4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
D
N1
V
+
V
-
D
N3
S
N4
1
ALD1106
TOP VIEW
SBL, PBL, DB PACKAGES
TOP VIEW
SAL, PAL, DA PACKAGES
Operating Temperature Range*
0°C to +70°C0°C to +70°C -55°C to +125°C
8-Pin SOIC 8-Pin Plastic Dip 8-Pin CERDIP
Package Package Package
ALD1116SAL ALD1116PAL ALD1116DA
14-Pin SOIC 14-Pin Plastic Dip 14-Pin CERDIP
Package Package Package
ALD1106SBL ALD1106PBL ALD1106DB
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
D
N1
(1)
D
N2
(14)
G
N1
(2)
S
N1
(3) S
N2
(12)
V
-
(4)
G
N2
(13)
D
N3
(10)
D
N4
(5)
G
N3
(9)
S
N3
(8) S
N4
(7)
~
V
+
(11)
V
-
(4)
G
N4
(6)
ALD1106
ALD1106/ALD1116 Advanced Linear Devices 2 of 11
Drain-source voltage, V
DS
10.6V
Gate-source voltage, V
GS
10.6V
Power dissipation 500mW
Operating temperature range SAL, PAL, SBL, PBL packages 0°C to +70°C
DA, DB packages -55°C to +125°C
Storage temperature range -65°C to +150°C
Lead temperature, 10 seconds +260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ABSOLUTE MAXIMUM RATINGS
Gate Threshold V
T
0.4 0.7 1.0 0.4 0.7 1.0 V I
DS
= 1.0µA V
GS
= V
DS
Voltage
Offset Voltage V
OS
2 10 2 10 mV I
DS
= 10µA V
GS
= V
DS
V
GS1
-V
GS2
Gate Threshold
Temperature TC
VT
-1.2 -1.2 mV/°C
Drift
2
On Drain I
DS (ON)
3.0 4.8 3.0 4.8 mA V
GS
= V
DS
= 5V
Current
Transconductance G
IS
1.0 1.8 1.0 1.8 mmho V
DS
= 5V I
DS
= 10mA
Mismatch G
fs
0.5 0.5 %
Output G
OS
200 200 µmho V
DS
= 5V I
DS
= 10mA
Conductance
Drain Source R
DS (ON)
350 500 350 500 V
DS
= 0.1V V
GS
= 5V
On Resistance
Drain Source
On Resistence
DS (ON)
0.5 0.5 % V
DS
= 0.1V V
GS
= 5V
Mismatch
Drain Source
Breakdown BV
DSS
12 12 V I
DS
= 1.0µA V
GS
= 0V
Voltage
Off Drain I
DS (OFF)
10 400 10 400 pA V
DS
=12V V
GS
= 0V
Current
1
44nAT
A
= 125°C
Gate Leakage I
GSS
0.1 10 0.1 10 pA V
DS
= 0V V
GS
= 12V
Current 1 1 nA T
A
= 125°C
Input C
ISS
13 13pF
Capacitance
2
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25°C unless otherwise specified
ALD1106 ALD1116 Test
Parameter Symbol Min Typ Max Min Typ Max Unit Conditions
Notes:
1
Consists of junction leakage currents
2
Sample tested parameters
ALD1106/ALD1116 Advanced Linear Devices 3 of 11
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
DRAIN SOURCE CURRENT
(mA)
20
15
10
0
5
V
BS
= 0V
T
A
= 25°C
V
GS
= 12V
10V
8V
6V
4V
2V
DRAIN SOURCE VOLTAGE (V)
024 681012
LOW VOLTAGE OUTPUT
CHARACTERISTICS
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE CURRENT
(µA)
-160 -80 0 80 160
-1000
1000
500
0
-500
4V
V
GS
= 12V
6V
V
BS
= 0V
T
A
= 25°C
2V
GATE SOURCE VOLTAGE (V)
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
DRAIN SOURCE CURRENT
(µA)
20
15
10
5
0
0 0.8 1.6 2.4 3.2 4.0
V
BS
= 0V -2V
-4V
-6V
-8V
-10V
-12V
V
GS
= V
DS
T
A
= 25°C
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
R
DS (ON)
vs. GATE SOURCE VOLTAGE
DRAIN SOURCE ON RESISTANCE
(K)
100
10
1
0.1
20 4 6 8 10 12
V
DS
= 0.2V
V
BS
= 0V
T
A
= +25°C
T
A
= +125°C
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
OFF DRAIN SOURCE CURRENT
(pA)
-50 -25
+25 +50 +75 +125+1000
V
DS
= +12V
V
GS
= V
BS
= 0V
1
10
100
1000
FORWARD TRANSCONDUCTANCE
(mmho)
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
DRAIN SOURCE VOLTAGE (V)
20
10
2
1
0.5
5
0.2
02 4681012
I
DS
= 1mA
T
A
= +25°C
I
DS
= 10mA
T
A
= +125°C
V
BS
= 0V
f = 1KHz
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