Symbol
Min
Typ
Max
Units
BV
DSS
40 V
1
I
GSS
±100 nA
VGS(th)
V
9
g
FS
S
C
ISS
1160
pF
C
OSS
218
pF
C
RSS
140
pF
Q
g
18.2
nC
26
65
16
t
D(ON)
22
ns
t
r
ns
t
D(OFF)
ns
t
f
ns
V
DS=20V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=20V
I
D=1A
V
GS=10V
R
GEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
V
GS=10V , ID=11A
V
DS=5V , ID=11A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
R
DS(ON)
Drain-Source On-State Resistance
Forward Transconductance
I
DSS
uA
Gate Threshold Voltage
V
DS=VGS , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS
(
T
A=25
°
C unless otherwise noted
)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=4.5V , ID=10A
11.5
11
15
m ohm
c
f=1.0MHz
c
STT432S
Ver 1.0
www.samhop.com.tw
Aug,04,2009
2
VSD
nC
Q
gs
nC
Q
gd
2.5
5.4
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=20V,ID=11A,
V
GS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2.5A
0.76 1.2
V
IS
Maximum Continuous Drain-Source Diode Forward Current
2.5
A
Notes
nC
11.2
VDS=20V,ID=11A,VGS=10V
V
DS=20V,ID=11A,VGS=4.5V
b
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
J=25
°
C,L=0.5mH,VDD = 20V.(See Figure13)
_
_
_
1 1.5 3
40
