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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/13/06
IS61LV10248 ISSI
®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2.2 VDD + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
I
LI Input Leakage GND ≤ VIN ≤ VDD Com. –1 1 µA
Ind. –5 5
ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled Com. –1 1 µA
Ind. –5 5
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 -10
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
ICC VDD Dynamic Operating VDD = Max., Com. — 110 — 100 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — 120 — 110
ISB1 TTL Standby Current VDD = Max., Com. — 30 — 30 mA
(TTL Inputs) VIN = VIH or VIL Ind. — 35 — 35
CE ≥ VIH, f = 0
ISB2 CMOS Standby VDD = Max., Com. — 20 — 20 mA
Current (CMOS Inputs) CE ≥ VDD – 0.2V, Ind. — 25 — 25
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V
, f = 0
Note:
1. At f = f
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.