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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
1
Rev. C
04/13/06
IS61LV10248 ISSI
®
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
1M x 8 HIGH-SPEED CMOS STATIC RAM
APRIL 2006
FEATURES
High-speed access times:
8, 10 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for
greater noise immunity
Easy memory expansion with CE and OE
options
CE power-down
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 3.3V power supply
Packages available:
48-ball miniBGA (9mm x 11mm)
– 36-ball miniBGA
(9mm x 11mm)
– 44-pin TSOP (Type II)
Lead-free available
DESCRIPTION
The ISSI IS61LV10248 is a very high-speed, low power,
1M-word by 8-bit CMOS static RAM. The IS61LV10248 is
fabricated using ISSI's high-performance CMOS technol-
ogy. This highly reliable process coupled with innovative
circuit design techniques, yields higher performance and
low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
The IS61LV10248 operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV10248 is available in 48 ball mini BGA, 36-ball
mini BGA, and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A19
CE
OE
WE
1M X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/13/06
IS61LV10248 ISSI
®
PIN CONFIGURATION
36 mini BGA (B) (9mm x 11mm)
PIN DESCRIPTIONS
A0-A19 Address Inputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
I/O0-I/O7 Data Input / Output
VDD Power
GND Ground
NC No Connection
48-pin Mini BGA (M ) (9mm x 11mm)
44-pin TSOP (Type II )
1 2 3 4 5 6
A
B
C
D
E
F
G
H
A0
I/O4
I/O5
GND
V
DD
I/O6
I/O7
A9
A1
A2
OE
A10
NC
WE
A19
A18
CE
A11
A3
A4
A5
A17
A16
A12
A6
A7
A15
A13
A8
I/O0
I/O1
V
DD
GND
I/O2
I/O3
A14
1 2 3 4 5 6
A
B
C
D
E
F
G
H
NC
NC
NC
GND
V
DD
NC
NC
A18
OE
NC
NC
NC
NC
NC
NC
A8
A0
A3
A5
A17
NC
A14
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
CE
I/O1
I/O3
I/O4
I/O5
WE
A11
NC
I/O0
I/O2
V
DD
GND
I/O6
I/O7
A19
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A0
A1
A2
A3
A4
CE
I/O0
I/O1
VDD
GND
I/O2
I/O3
WE
A5
A6
A7
A8
A9
NC
NC
NC
NC
NC
A18
A17
A16
A15
OE
I/O7
I/O6
GND
VDD
I/O5
I/O4
A14
A13
A12
A11
A10
A19
NC
NC
44
43
42
41
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
3
Rev. C
04/13/06
IS61LV10248 ISSI
®
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.5 to VDD + 0.5 V
VDD VDD Relates to GND –0.3 to 4.0 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.0 W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
TRUTH TABLE
Mode
WEWE
WEWE
WE
CECE
CECE
CE
OEOE
OEOE
OE I/O Operation VDD Current
Not Selected X H X High-Z I
SB1, ISB2
(Power-down)
Output Disabled H L H High-Z ICC
Read H L L DOUT ICC
Write L L X DIN ICC
OPERATING RANGE
Range Ambient Temperature VDD
Commercial 0°C to +70°C 3.3V +10%, -5%
Industrial –40°C to +85°C 3.3V +10%, -5%
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
CI/O Input/Output Capacitance VOUT = 0V 8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A = 25°C, f = 1 MHz, VDD = 3.3V.
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