91929 15PB1

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

FRED
Ultrafast Soft Recovery Diode, 15 A
FEATURES
Ultrafast and ultrasoft recovery
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION
PRODUCT SUMMARY
V
R
1200 V
t (typ.)
rr
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage
600
Maximum continuous forward current
I
F
15
A
Single pulse forward current
140
Maximum repetitive forward current
60
Maximum power dissipation
75
W
30
Operating junction and storage temperature range
- 55 to + 150
N-HFA15PB120
Nell High Power Products
SEMICONDUCTOR
RoHS
RoHS
SEMICONDUCTOR
RoHS
RoHS
Page 1 of 5
HFA15PB120 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a
superb combination of characteristics which result in
performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200V and
15 A continuous current,the HFA15PB120 is especially
well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultrafast recovery time,
the FRED product line features extremely low values
of peak recovery current (IRRM) and does not exhibit
any tendency to snap-off during the tb portion of
recovery. The FRED features combine to offer
designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the
switching transistor. These FRED advantages can
help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA15PB120 is
ideally suited for applications in power supplies and
power conversion systems (such as inverters), motor
drives, and many other similar applications where high
speed, high efficiency is needed.
T = 120 ºC
c
T = 100 ºC
c
T = 25 ºC
c
ºC
common
cathode
Cathode
2
1
3
Anode
TO-247 AC modified
3.0 V
P
D
30 ns
Very low I and Q
RRM rr
Compliant to RoHS
Designed and qualified for industrial level
l
F(AV)
V at l at 25°C
F F,
T max.
J
Diode variation
Package
TO-247AC modified (2 pins)
15A
150ºC
Single die
V
R
l
FSM
l
FRM
T , T
J Stg
V
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THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063'' from case (1.6 mm) for 10 s
Junction to case,
single leg conduction
R
thJC
- -
K/W
Junction to case,
both legs conducting
- -
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased
Weight
- 6.0 - g
- 0.21 - oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf . cm
(lbf . in)
Marking device Case style TO-247AC (JEDEC)
Nell High Power Products
SEMICONDUCTOR
RoHS
RoHS
SEMICONDUCTOR
RoHS
RoHS
Page 2 of 5
HFA15PA120
°C
ºC unless otherwise specified)= 25
PARAMETER SYMBOL TEST CONDITION S
V
-
= 30 AI
F
-
-
µA
--
1200
2.3
20
-
-
pF
17
ELECTRICAL SPECIFICATIONS (T
J
Cathode to anode
breakdown voltage
V
BR
= 100 µAI
R
Maximum forward voltage
= 15 AI
F
= 15 A, TI = 125 ºC
F
J
Maximum reverse
leakage current
I
RM
Junction capacitance
2.5 3.0
-
-
ºC unless otherwise specified)= 25
PARAMETER SYMBOL TEST CONDITIONS
ns
-
-
240
290
DYNAMIC RECOVERY CHARACTERISTICS PERLEG (T
J
Reverse recovery time
I
F
= 1.0 A, dI /dt = -200 A/µs, V =30 V, T = 25°C
F R J
30
-
A
-
6
3
-
nC
-
960
260
-
Peak recovery current
Reverse recovery charge
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
T = 125 ºC
J
T = 125 ºC
J
T = 125 ºC
J
T = 25 ºC
J
T = 25 ºC
J
T = 25 ºC
J
I = 15A
F
dI /dt = -200 A/µs
F
V = 800 V
R
-
V
FM
C
T
V = 200V
R
T = 125°C, V = V rated
J R R
V = V rated
R R
I = 0.5A, I = 1.0A, I = 250mA (RG#1 CKT)
F R
RR
28
-
3.0
UNITS
MAX.
TYP.
MIN.
UNITS
MAX.
TYP.
MIN.
A/µs
-
76
-
dl /dt2
(rec)M
T = 125 ºC
J
T = 25 ºC
J
-
-
nH
12
Series inductance
L
S
-
500
-
-
Measured lead to lead 5 mm from package body
dl /dt1
(rec)M
120
6.0
60
33
10
600
180
-
-
120
41
300
41
N-HFA15PB120
1.20
-
-
-
-
-
0.26
-
1
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Peak rate of fall of recovery
current during t
b
Nell High Power Products
SEMICONDUCTOR
RoHS
RoHS
SEMICONDUCTOR
RoHS
RoHS
N-HFA15PB120
-5
10
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
thermal impedance- (°C/W)Z
θJC
-4
10
-3
10
-2
10
-1
10
1
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
4
3
21
0
Forward current-l (A)
F
Anode-to-cathode voltage-V (V)
F
8006004002000 1000 1200
Fig3. Reverse recovery time vs. current rate
of change
Reverse recovery time-t (ns)
rr
Current rate of change-di /dt(A/µs)
F
Fig.4 Reverse recovery charge vs. current
rate of change
Reverse recovery charge-Q (nC)
rr
Current rate of change-di /dt(A/µs)
F
8006004002000 1000 1200
Current rate of change-di /dt(A/µs)
F
Reverse recovery current-l (A)
RRM
8006004002000 1000 1200
Fig.5 Reverse recovery current vs. current
rate of change
1.20
1.00
0.80
0.60
0.40
0.20
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Note:
D = 0.9
Duty Factor D = t /t
1 2
Peak T = P x Z + T
J DM θJC C
t
1
t
2
60
50
40
30
20
10
0
T = 175°C
J
T = 125°C
J
T = 25°C
J
T = -55°C
J
5
400
350
300
250
200
150
100
50
0
7.5A
15A
30A
P
DM
T = 125°C
J
V = 800V
R
30A
7.5A
15A
2500
2000
1500
1000
500
0
T = 125°C
J
V = 800V
R
25
20
15
10
5
0
30A
15A
7.5A
T = 125°C
J
V = 800V
R
Page 3 of 5
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