ST700C..L Series
3
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Bulletin I25190 rev. D 04/00
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, t
r
≤ 1µs
of turned-on current T
J
= T
J
max, anode voltage ≤ 80% V
DRM
Gate current 1A, di
g
/dt = 1A/µs
V
d
= 0.67% V
DRM
,
T
J
= 25°C
I
TM
= 750A, T
J
= T
J
max, di/dt
= 60A/µs, V
R
= 50V
dv/dt
= 20V/µs, Gate 0V 100Ω, t
p
= 500µs
Parameter ST700C..L Units Conditions
Switching
1000 A/µs
t
d
Typical delay time 1.0
t
q
Typical turn-off time 150
µs
dv/dt Maximum critical rate of rise of
off-state voltage
I
DRM
Max. peak reverse and off-state
I
RRM
leakage current
Blocking
500 V/µsT
J
= T
J
max. linear to 80% rated V
DRM
Parameter ST700C..L Units Conditions
80 mA T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power 10.0 T
J
= T
J
max, t
p
≤ 5ms
P
G(AV)
Maximum average gate power 2.0 T
J
= T
J
max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current 3.0 A T
J
= T
J
max, t
p
≤ 5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
T
J
= - 40°C
mA T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
VT
J
= 25°C
T
J
= 125°C
I
GD
DC gate current not to trigger 10 mA
Parameter ST700C..L Units Conditions
20
5.0
Triggering
TYP. MAX.
200 -
100 200
50 -
2.5 -
1.8 3.0
1.1 -
V
GD
DC gate voltage not to trigger 0.25 V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J
= T
J
max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
V
T
J
= T
J
max, t
p
≤ 5ms
