ST700C..L Series
7
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Bulletin I25190 rev. D 04/00
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Gate Characteristics
100
1000
10000
0.511.522.533.54
T = 25° C
J
Instan tan eous O n-state Current (A)
In stan tane ous O n-sta te Voltage (V )
T = 125°C
J
ST700C..L Series
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Squa re W a ve Pulse D uratio n (s)
thJ-hs
Steady Sta te V alue
R = 0.073 K/W
(Sin gle Side Cooled)
R = 0.031 K/W
(Double Side Cooled)
(D C Ope ration)
ST700C ..L Series
thJ-hs
thJ-hs
Transien t Th ermal Im pe dan ce Z (K/W )
0.1
1
10
100
0.0 01 0 .0 1 0 .1 1 10 1 00
VG D
IG D
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(2)
(3)
Insta ntane ous G ate Curren t (A)
Insta ntaneous G ate Volta ge (V)
a) Recommended load line for
b) Re co m m e nde d load line for
<=30% rated di/dt : 10V, 10ohm s
Frequency Lim ite d by PG (AV)
rated di/d t : 20V, 1 0ohm s; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W , tp = 4m s
(2) PGM = 20W , tp = 2m s
(3) PGM = 40W , tp = 1m s
(4) PG M = 60W , tp = 0.66ms
Rectangular gate pulse
Device : ST700C..L Series
(4)
