MMA25312BT1
1
RF Device Data
Freescale Semiconductor, Inc.
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMA25312B is a high efficiency InGaP HBT amplifier designed for
use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and
wireless broadband mesh networks. It is suitable for applications with
frequencies from 2300 to 2700 MHz using simple external matching
components witha3to5voltsupply.
Features
• Frequency: 2300--2700 MHz
• P1dB: 31 dBm @ 2500 MHz
• Power Gain: 26 dB @ 2500 MHz
• OIP3: 40 dBm @ 2500 MHz
• Active Bias Control (On--chip)
• Single 3 to 5 Volt Supply
• Single--ended Power Detector
• Cost--effective QFN Surface Mount Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.
2300--2700 MHz, 26 dB
31 dBm
InGaP HBT
MMA25312BT1
CASE 2131--01
QFN 3×3
PLASTIC
Table 1. Typical CW Performance
(1)
Characteristic Symbol 2300
MHz
2500
MHz
2700
MHz
Unit
Small--Signal Gain
(S21)
G
p
26 26 24.5 dB
Input Return Loss
(S11)
IRL -- 1 4 -- 1 2 -- 1 2 dB
Output Return Loss
(S22)
ORL -- 1 1 -- 1 3 -- 1 5 dB
Power Output @
1dB Compression
P1dB 30 31 29.8 dBm
1. V
CC1
=V
CC2
=V
BIAS
=5Vdc,T
A
=25°C, 50 ohm system, CW
Application Circuit
Table 2. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage V
CC
6 V
Supply Current I
CC
550 mA
RF Input Power P
in
30 dBm
Storage Temperature Range T
stg
--65 to +150 °C
Junction Temperature
(2)
T
J
150 °C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics
Characteristic Symbol Value
(3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 91°C, V
CC1
=V
CC2
=V
BIAS
=5Vdc
R
θ
JC
92 °C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor
Technical Data
Document Number: MMA25312B
Rev. 0, 9/2012
© Freescale Semiconductor, Inc., 2012.
ll rights reserved.
