OHMITE 12FR100

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Item Description: RES 0.1 OHM 2W 1% AXIAL

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OHMITE 0425
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

12F(R) SERIES
STANDARD RECOVERY DIODES
12 A
1
Stud Version
Bulletin I20205 rev. A 09/98
www.irf.com
Features
High surge current capability
Avalanche types available
Stud cathode and stud anode version
Wide current range
Types up to 1200V V
RRM
Typical Applications
Battery charges
Converters
Power supplies
Machine tool controls
Parameters 12F(R) Units
I
F(AV)
12 A
@ T
C
144 °C
I
F(RMS)
19 A
I
FSM
@
50Hz 265 A
@ 60Hz 280 A
I
2
t@
50Hz 351 A
2
s
@ 60Hz 320 A
2
s
V
RRM
range 100 to 1200 V
T
J
range - 65 to 175 °C
Major Ratings and Characteristics
case style
DO-203AA (DO-4)
12F(R) Series
2
Bulletin I20205 rev. A 09/98
www.irf.com
Voltage V
RRM
, maximum V
RSM
, maximum non- V
R(BR)
, minimum I
RRM
max.
Type number Code repetitive peak repetitive peak avalanche
@ T
J
= 175°C
reverse voltage reverse voltage voltage
VVV(1) mA
10 100 150 --
20 200 275 --
40 400 500 500
12F(R) 60 600 725 750 12
80 800 950 950
100 1000 1200 1150
120 1200 1400 1350
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
F(AV)
Max. average forward current 12 A 180° conduction, half sine wave
@ Case temperature 144 °C
I
F(RMS)
Max. RMS forward current 19 A
P
R
Maximum non-repetitive 7 K/W 10µs square pulse, T
J
= T
J
max.
peak reverse power see note (2)
I
FSM
Max. peak, one-cycle forward, 265 t = 10ms No voltage
non-repetitive surge current 280 t = 8.3ms reapplied
225 t = 10ms 100% V
RRM
235 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I
2
t for fusing 351 t = 10ms No voltage Initial T
J
= T
J
max.
320 t = 8.3ms reapplied
250 t = 10ms 100% V
RRM
226 t = 8.3ms reapplied
I
2
t Maximum I
2
t for fusing 3510 A
2
s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f
1
Low level value of forward
slope resistance
r
f
2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop 1.26 V I
pk
= 38A, T
J
= 25°C, t
p
= 400µs rectangular wave
Parameter 12F(R) Units Conditions
6.20 (I > π x I
F(AV)
), T
J
= T
J
max.
10.70 (16.7% x π x I
F(AV)
< I < π x I
F(AV)
), T
J
= T
J
max.
m
0.97 (I > π x I
F(AV)
), T
J
= T
J
max.
0.77 (16.7% x π x I
F(AV)
< I < π x I
F(AV)
), T
J
= T
J
max.
V
A
2
s
A
Forward Conduction
(2) Available only for Avalanche version, all other parameters the same as 12F.
(1) Avalanche version only available from V
RRM
400V to 1200V.
12F(R) Series
3
Bulletin I20205 rev. A 09/98
www.irf.com
180° 0.33 0.26 T
J
= T
J
max.
120° 0.41 0.44
90° 0.53 0.58
60° 0.78 0.81
30° 1.28 1.29
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
K/W
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Ordering Information Table
1 234 5
Device Code
A12F R120M
1 - A = Avalanche diode
None = Standard diode
2 - Current rating: Code = I
F(AV)
3 - F = Standard device
4 - None = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5 - Voltage code: Code x 10 = V
RRM
(See Voltage Ratings table)
6 - None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M = Stud base DO-203AA (DO-4) M5 X 0.8 - (Not available for Avalanche diodes)
6
Parameter 12F(R) Units Conditions
T
J
Max. junction operating temperature range -65 to 175
T
stg
Max. storage temperature range -65 to 200
R
thJC
Max. thermal resistance, junction to case 2 DC operation
R
thCS
Max. thermal resistance, case Mounting surface, smooth, flat and
to heatsink greased
T Mounting torque, ± 10% 1.2 Nm Lubricated threads
(1.5) (Not lubricated threads)
wt Approximate weight 7 (0.25) g (oz)
Case style DO-203AA (DO-4) See Outline Table
°C
0.5
K/W
Thermal and Mechanical Specifications
12NEXT

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