ATC 100B5R1CT500XT

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Item Description: Multilayer Ceramic CapacitorsMLCC - SMD/SMT 500volts 5.1p

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
1
RF Device Data
Freescale Semiconductor, Inc.
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC21100N wideband integrated circuit is des igned with on--chip
matching that makes it usable from 2110 to 2170 MHz. This multi-- stage
structure is rated for 24 to 32 Volt operation and covers all typic al cellular base
station modulation formats including TD--SCDMA.
! Typical Single--Carrier W--CDMA Performance: V
DD
=28Volts,I
DQ1A
+
I
DQ1B
= 190 mA, I
DQ2A
+I
DQ2B
= 925 mA, P
out
= 32 Watts Avg.,
f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain 28.5 dB
Power Added Efficiency 30%
Device Output Signal PAR 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset --38 dBc in 3.84 MHz Channel Bandwidth
! Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, P
out
= 110 Watts CW
(3 dB Input Overdrive from Rated P
out
)
! Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 100 Watts CW
P
out
.
! Typical P
out
@ 1 dB Compression Point 110 Watts CW
Features
! 100% PAR Tested for Guaranteed Output Power Capability
! Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S-Parameters
! On--Chip Matching (50 Ohm Input, on a per side basis, DC Blocked)
! Internally Matched for Ease of Use
! Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
! Integrated ESD Protection
! 225"C Capable Plastic Package
! In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
Figure 1. Functional B lock Diagram Figure 2. Pin Connections
Quiescent Current
Temperature Compensation
(1)
V
DS1A
RF
inA
V
GS1A
RF
out1
/V
DS2A
V
GS2A
Note: Exposed backside of the package is
the source terminal for the transistors.
Quiescent Current
Temperature Compensation
(1)
V
DS1B
RF
inB
V
GS1B
RF
out2
/V
DS2B
V
GS2B
V
DS1A
NC
NC
NC
RF
out1
/V
DS2A
1
2
3
4
7
8
14
V
GS1B
9
10
11
V
GS2A
V
GS1A
RF
inA
RF
inB
V
GS2B
NC
V
DS1B
RF
out2
/V
DS2B
13
6
12
(Top View)
5
1. Refer to A N1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. G o to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
Document Number: MD7IC21100N
Rev. 2, 2/2012
Freescale Semiconductor
Technical Data
2110--2170 MHz, 32 W AVG., 28 V
SINGLE W-- CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
MD7IC21100NR1
MD7IC21100GNR1
MD7IC21100NBR1
CASE 1618--02
TO--270 WB--14
PLASTIC
MD7IC21100NR1
CASE 1621--02
TO--270 WB--14 GULL
PLASTIC
MD7IC21100GNR1
CASE 1617--02
TO--272 WB--14
PLASTIC
MD7IC21100NBR1
# Freescale Semiconductor , Inc., 2008, 2011--2012.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +65 Vdc
Gate--Source Voltage V
GS
--0.5, +6.0 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
--65 to +150 "C
Case Operating Temperature T
C
150 "C
Operating Junction Temperature
(1,2)
T
J
225 "C
Input Power P
in
29 dBm
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
(Case Temperature 76"C, 32 W CW) Stage 1, 28 Vdc, I
DQ1A
+I
DQ1B
= 190 mA
(Case Temperature 76"C, 32 W CW) Stage 2, 28 Vdc, I
DQ2A
+I
DQ2B
= 925 mA
R
$
JC
2.7
0.7
"C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 0
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) III
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 "C
Table 5. Electrical Characteristics (T
A
=25"C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Stage 1 Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
=65Vdc,V
GS
=0Vdc)
I
DSS
10 %Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=28Vdc,V
GS
=0Vdc)
I
DSS
1 %Adc
Gate--Source Leakage Current
(V
GS
=1.5Vdc,V
DS
=0Vdc)
I
GSS
1 %Adc
Stage 1 On Characteristics
(4)
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
=50%Adc)
V
GS(th)
1 2 3 Vdc
Gate Quiescent Voltage
(V
DS
=28Vdc,I
DQ1A
+I
DQ1B
= 190 mAdc)
V
GS(Q)
2.9 Vdc
Fixture Gate Quiescent Voltage
(V
DD
=28Vdc,I
DQ1A
+I
DQ1B
= 190 mAdc, Measured in Functional Test)
V
GG(Q)
5.5 6.3 7 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
MD7IC21100NR1 MD7IC21100GNR1 MD7IC21100NBR1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
=25"C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Stage 2 Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
=65Vdc,V
GS
=0Vdc)
I
DSS
10 %Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=28Vdc,V
GS
=0Vdc)
I
DSS
1 %Adc
Gate--Source Leakage Current
(V
GS
=1.5Vdc,V
DS
=0Vdc)
I
GSS
1 %Adc
Stage 2 On Characteristics
(1)
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 270 %Adc)
V
GS(th)
1 2 3 Vdc
Gate Quiescent Voltage
(V
DS
=28Vdc,I
DQ2A
+I
DQ2B
= 925 mAdc)
V
GS(Q)
2.8 Vdc
Fixture Gate Quiescent Voltage
(V
DD
=28Vdc,I
DQ2A
+I
DQ2B
= 925 mAdc, Measured in Functional Test)
V
GG(Q)
5.3 5.9 6.8 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=1Adc)
V
DS(on)
0.1 0.3 0.8 Vdc
Stage 2 Dynamic Characteristics
(1,2)
Output Capacitance
(V
DS
=28Vdc& 30 mV(rms)ac @ 1 MHz, V
GS
=0Vdc)
C
oss
380 pF
Functional Tests
(3)
(In Freescale Wideband 2110--2170 MHz Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ1A
+I
DQ1B
= 190 mA, I
DQ2A
+
I
DQ2B
= 925 mA, P
out
= 32 W Avg., f = 2167.5 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ &5MHzOffset.
Power Gain
G
ps
27 28.5 32 dB
Power Added Efficiency PAE 27 30 %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.6 6.1 dB
Adjacent Channel Power Ratio ACPR -- 3 8 -- 3 6 dBc
Input Return Loss IRL -- 1 5 -- 9 dB
Typical Performances
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ1A
+I
DQ1B
= 190 mA, I
DQ2A
+I
DQ2B
= 925 mA,
2110--2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW P1dB 110 W
IMD Symmetry @ 112 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc (Delta IMD Third Order Intermodulation
between Upper and Lower Sidebands > 2 dB)
IMD
sym
50
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
50 MHz
Gain Flatness in 6 0 MHz Bandwidth @ P
out
=32WAvg. G
F
0.3 dB
Quiescent Current Accuracy over Temperature
with 4.7 k' Gate Feed Resistors (--30 to 85"C)
(4)
(I
QT
&3 %
Average Deviation from Linear Phase in 60 MHz Bandwidth
@P
out
=110WCW
) 0.6 "
Average Group Delay @ P
out
= 110 W CW, f = 2140 MHz Delay 2.6 ns
Part--to--Part Insertion Phase Variation @ P
out
=110WCW,
f = 2140 MHz, Six Sigma Window
() 35 "
Gain Variation over Temperature (--30"Cto+85"C) (G 0.042 dB/"C
Output Power Variation over Temperature (--30"Cto+85"C) (P1dB 0.003 dB/"C
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a single--ended configuration.
4. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
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