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Technical Document


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Datasheet 127
DRAM Controller Registers (D0:F0)
5.2.42 EPDCKECONFIGREG—EPD CKE Related Configuration
B/D/F/Type: 0/0/0/MCHBAR
Address Offset: A28–A2Ch
Default Value: 00E0000000h
Access: RW
Size: 40 bits
BIOS Optimal Default 0h
CKE related configuration registers For EPD.
Bit Access
Default
Value
Description
39:35 RW 00000b
EPDunit TXPDLL Count (EPDTXPDLL): Specifies the delay from precharge
power down exit to a command that requires the DRAM DLL to be operational.
The commands are read/write.
34:32 RW 000b
EPDunit TXP Count (EPDCKETXP): Specifies the timing requirement for
Active power down exit or fast exit pre-charge power down exit to any command
or slow exit pre-charge power down to Non-DLL (rd/wr/odt) command.
31:29 RW 111b
Mode Select (sd0_cr_sms): Mode Select register: This configuration setting
indicates the mode in which the controller is operating in.
111 = Indicates normal mode of operation, else special mode of operation.
28:27 RW 00b
EPDunit EMRS Command Select. (EPDEMRSSEL): EMRS mode to select
BANK address.
01 = EMRS
10 = EMRS2
11 = EMRS3
26:24 RW 000b
CKE Pulse Width Requirement in High Phase (sd0_cr_cke_pw_hl_safe):
This field indicates CKE pulse width requirement in high phase.
23:20 RW 0h
One-Hot Active Rank Population (ep_scr_actrank): This field indicates the
active rank in a one hot manner
19:17 RW 000b
CKE Pulse Width Requirement in Low Phase (sd0_cr_cke_pw_lh_safe):
This field indicates CKE pulse width requirement in low phase.
16:15 RO 0h Reserved
14 RW 0b
EPDunit MPR Mode (EPDMPR): MPR Read Mode
1 = MPR mode
0 = Normal mode
In MPR mode, only read cycles must be issued by Firmware. Page Results are
ignored by DCS and just issues the read chip select.
13 RW 0b
EPDunit Power Down enable for ODT Rank (EPDOAPDEN): Configuration
to enable the ODT ranks to dynamically enter power down.
1 = Enable active power down.
0 = Disable active power down.
12 RW 0b
EPDunit Power Down enable for Active Rank (EPDAAPDEN): Configuration
to enable the active rank to dynamically enter power down.
1 = Enable active power down.
0 = Disable active power down.
11:10 RO 0h Reserved
9:1 RW
0000000
00b
Self Refresh Exit Count (sd0_cr_slfrfsh_exit_cnt): This field indicates the
Self refresh exit count. (Program to 255)
DRAM Controller Registers (D0:F0)
128 Datasheet
5.2.43 EPDREFCONFIG—EP DRAM Refresh Configuration
B/D/F/Type: 0/0/0/MCHBAR
Address Offset: A30–A33h
Default Value: 40000C30h
Access: RW, RO
Size: 32 bits
Settings to configure the EPD refresh controller.
0RW0b
Indicates Only 1 Rank Enabled (sd0_cr_singledimmpop): This field
indicates the that only 1 rank is enabled. This bit needs to be set if there is one
active rank and no odt ranks, or if there is one active rank and one ODT rank and
they are the same rank.
Bit Access
Default
Value
Description
Bit Access
Default
Value
Description
31 RO 0b Reserved
30:29 RW 10b
EPDunit refresh count addition for self refresh exit. (EPDREF4SR):
Configuration indicating the number of additional refreshes that needs to be
added to the refresh request count after exiting self refresh.
Typical value is to add 2 refreshes.
00 = Add 0 Refreshes
01 = Add 1 Refreshes
10 = Add 2 Refreshes
11 = Add 3 Refreshes
28 RW 0b
Refresh Counter Enable (REFCNTEN): This bit is used to enable the refresh
counter to count during times that DRAM is not in self-refresh, but refreshes are
not enabled. Such a condition may occur due to need to reprogram DIMMs
following DRAM controller switch.
This bit has no effect when Refresh is enabled (i.e., there is no mode where
Refresh is enabled but the counter does not run) So, in conjunction with bit [23]
REFEN, the modes are:
[REFEN:REFCNTEN] Description
[0:0] Normal refresh disable
[0:1] Refresh disabled, but counter is accumulating refreshes.
[1:X] Normal refresh enable
27 RW 0b
Refresh Enable (REFEN): Refresh is enabled.
0 = Disabled
1 = Enabled
26 RW 0b
DDR Initialization Done (INITDONE): Indicates that DDR initialization is
complete.
Datasheet 129
DRAM Controller Registers (D0:F0)
25:22 RW 0000b
DRAM Refresh Hysterisis (REFHYSTERISIS): Hysterisis level - Useful for
dref_high watermark cases. The dref_high flag is set when the dref_high
watermark level is exceeded, and is cleared when the refresh count is less than
the hysterisis level. This bit should be set to a value less than the high
watermark level.
0000 = 0
0001 = 1
.......
1000 = 8
21:18 RW 0000b
DRAM Refresh High Watermark (REFHIGHWM): When the refresh count
exceeds this level, a refresh request is launched to the scheduler and the
dref_high flag is set.
0000 = 0
0001 = 1
.......
1000 = 8
17:14 RW 0000b
DRAM Refresh Low Watermark (REFLOWWM): When the refresh count
exceeds this level, a refresh request is launched to the scheduler and the
dref_low flag is set.
0000 = 0
0001 = 1
.......
1000 = 8
13:0 RW
0011000
0110000
b
Refresh Counter Time Out Value (REFTIMEOUT): Program this field with a
value that will provide 7.8 us at memory clock frequency.
At various memory clock frequencies, this results in the following values:
400 Mhz -> C30 hex (Default Value)
533 Mhz -> 104B hex
666 Mhz -> 1450 hex
Bit Access
Default
Value
Description
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