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9T25

Part # 9T25
Description
Category RELAY
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ESC CORP
Date Code: 9830
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

2011/08/22 Ver.2 Page 1
SPN3009
N-Channel Enhancement Mode MOSFET
DESCRIPTION APPLICATIONS
The SPN3009 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology. The SPN3009 has
b
een designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low R
DS(ON) and fast
switching speed.
z High Frequency Synchronous Buck Converter
z DC/DC Power System
z Load Switch
FEATURES PIN CONFIGURATION
TO-252
PART MARKING
30V/30A, RDS(ON)= 7.5m@VGS=10V
30V/15A,RDS(ON)= 11.0m@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252 package design
2011/08/22 Ver.2 Page 2
SPN3009
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin Symbol Description
1 G Gate
2 S Source
3 D Drain
ORDERING INFORMATION
Part Number Package Part Marking
SPN3009T252RGB TO-252 SPN3009
SPN3009T252RGB : Tape Reel ; Pb – Free ; Halogen - Free
ABSOULTE MAXIMUM RATINGS
(T
A=25 Unless otherwise noted)
Parameter Symbol Typical Unit
Drain-Source Voltage VDSS 30 V
Gate –Source Voltage VGSS ±20 V
TA=25 51
Continuous Drain Current
T
A=100
I
D
36
A
Pulsed Drain Current IDM 120 A
Avalanche Current IAS 34 A
Single Pulse Avalanche Energy EAS 130 mJ
Power Dissipation TA=25 PD 2.42 W
Operating Junction Temperature TJ 150
Storage Temperature Range TSTG -55/150
Thermal Resistance-Junction to Ambient (t10s)
R
θJA 62 /W
ELECTRICAL CHARACTERISTICS
2011/08/22 Ver.2 Page 3
SPN3009
N-Channel Enhancement Mode MOSFET
(TA=25 Unless otherwise noted)
Parameter Symbol Conditions Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1.0 2.5
V
Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA
VDS=24V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS
V
DS=24V,VGS=0V, TJ=55 5
uA
On-State Drain Current ID(on) VDS5V,VGS =10V 51 A
VGS= 10V,ID=30A 7.5 9
Drain-Source On-Resistance RDS(on)
VGS=4.5V,ID=15A 11 13.5
m
Forward Transconductance gfs VDS=5V,ID=30A 42 S
Diode Forward Voltage VSD IS=1A,VGS =0V 1 V
Single Pulse Avalanche Energy EAS
V
DD=25V, L=0.1mH,
I
AS=20A
45 mJ
Dynamic
Total Gate Charge Qg 10.6
Gate-Source Charge Qgs 4.2
Gate-Drain Charge Qgd
V
DS=15V,VGS=4.5V
I
D= 15A
4
nC
Input Capacitance Ciss 1127
Output Capacitance Coss 194
Reverse Transfer Capacitance Crss
V
DS=15VGS=0V
f=1MHz
78
pF
td(on) 6.4 13
Turn-On Time
t
r 70 127
td(off) 22.5 45
Turn-Off Time
t
f
V
DD=15V,
I
D=15A,VGEN=10V
R
G=3.3
8 18
nS
TYPICAL CHARACTERISTICS
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