7-35
7
Low Threshold
TN0106
TN0110
N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
DSS
/R
DS(ON)
I
D(ON)
V
GS(th)
BV
DGS
(max) (min) (max) TO-92 Die
†
60V 3.0Ω 2A 2.0V TN0106N3 —
100V 3.0Ω 2A 2.0V TN0110N3 TN0110ND
†
MIL visual screening available
Order Number / Package
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
Features
■■ Low threshold — 2.0V max.
■■ High input impedance
■■ Low input capacitance — 50pF typical
■■ Fast switching speeds
■■ Low on resistance
■■ Free from secondary breakdown
■■ Low input and output leakage
■■ Complementary N- and P-channel devices
Applications
■■ Logic level interfaces – ideal for TTL and CMOS
■■ Solid state relays
■■ Battery operated systems
■■ Photo voltaic drives
■■ Analog switches
■■ General purpose line drivers
■■ Telecom switches
Note: See Package Outline section for dimensions.
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage BV
DSS
Drain-to-Gate Voltage BV
DGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
*
Distance of 1.6 mm from case for 10 seconds.
TO-92
S G D
