ZXT951K
SEMICONDUCTORS
ISSUE 2 - DECEMBER 2003
2
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
(a)
R
⍜JA
59 °C/W
Junction to ambient
(b)
R
⍜JA
39 °C/W
Junction to ambient
(c)
R
⍜JA
30 °C/W
NOTES
(a) (For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(c) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper in still air conditions.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
CBO
-100 V
Collector-base voltage BV
CER
-100 V
Collector-emitter voltage BV
CEO
-60 V
Emitter-base voltage BV
EBO
-7 V
Peak pulse current I
CM
-15 A
Continuous collector current
(b)
I
C
-6 A
Base current I
B
-0.5 A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
2.1
16.8
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
3.2
25.6
W
mW/°C
Power dissipation at T
A
=25°C
(c)
Linear derating factor
P
D
4.2
33.6
W
mW/°C
Operating and storage temperature range T
j
,T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
