1
SEMICONDUCTORS
SUMMARY
BV
CEO
= 60V : R
SAT
= 35m ; I
C
= 6A
DESCRIPTION
Packaged in the SOT223 outline this new 5
th
generation low saturation 60V
NPN transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
•
Extremely low equivalent on-resistance; R
SAT
= 35mV at 6A
•
6 amps continuous current
•
Up to 20 amps peak current
•
Very low saturation voltages
•
Excellent h
FE
characteristics up to 10 amps
APPLICATIONS
•
Emergency lighting circuits
•
Motor driving (including DC fans)
•
Solenoid, relay and actuator drivers
•
DC Modules
•
Backlight Inverters
DEVICE MARKING
•
X5T851
ZX5T851G
ISSUE 2 - SEPTEMBER 2003
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
DEVICE REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZX5T851GTA 7” 12mm
embossed
1000 units
ZX5T851GTC 13” 4000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
S
O
T
2
2
3
