01/31/06

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

www.irf.com 1

D

2

Pak

IRFS4310PbF

TO-220AB

IRFB4310PbF

TO-262

IRFSL4310PbF

IRFB4310PbF

IRFS4310PbF

IRFSL4310PbF

HEXFET

®

Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

S

D

G

S

D

G

S

D

G

S

D

G

V

DSS

100V

R

DS(on)

typ.

5.6m

max. 7.0m

I

D

130A

Absolute Maximum Ratings

Symbol Parameter Units

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V A

I

D

@ T

C

= 100°C

Continuous Drain Current, V

GS

@ 10V

I

DM

Pulsed Drain Current

P

D

@T

C

= 25°C

Maximum Power Dissipation

W

Linear Derating Factor

W/°C

V

GS

Gate-to-Source Voltage

V

dV/dt

Peak Diode Recovery

V/ns

T

J

Operating Junction and

°C

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

E

AS (Thermally limited)

Single Pulse Avalanche Energy

mJ

I

AR

Avalanche Current

A

E

AR

Repetitive Avalanche Energy

mJ

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θ

JC

Junction-to-Case

–––

0.50

R

θ

CS

Case-to-Sink, Flat Greased Surface , TO-220

0.50 ––– °C/W

R

θ

JA

Junction-to-Ambient, TO-220

––– 62

R

θ

JA

Junction-to-Ambient (PCB Mount) , D

2

Pak

––– 40

300

Max.

130

92

550

980

See Fig. 14, 15, 22a, 22b,

300

14

-55 to + 175

± 20

2.0

10lb

in (1.1N m)

PD - 14275D

IRF/B/S/SL4310PbF

2 www.irf.com

Notes:

 Calculated continuous current based on maximum allowable junction

temperature. Package limitation current is 75A

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

Jmax

, starting T

J

= 25°C, L = 0.35mH

R

G

= 25Ω, I

AS

= 75A, V

GS

=10V. Part not recommended for use

above this value.

 I

SD

≤ 75A, di/dt ≤ 550A/µs, V

DD

≤ V

(BR)DSS

, T

J

≤ 175°C.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

S

D

G

 C

oss

eff. (TR) is a fixed capacitance that gives the same charging time

as C

oss

while V

DS

is rising from 0 to 80% V

DSS

.

 C

oss

eff. (ER) is a fixed capacitance that gives the same energy as

C

oss

while V

DS

is rising from 0 to 80% V

DSS

.

 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended

footprint and soldering techniques refer to application note #AN-994.

 R

θ

is measured at T

J

approximately 90°C.

Static @ T

J

= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage 100 ––– ––– V

∆

V

(BR)DSS

/

∆

T

J

Breakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 5.6 7.0

mΩ

V

GS(th)

Gate Threshold Voltage 2.0 ––– 4.0 V

I

DSS

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

I

GSS

Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leakage ––– ––– -200

R

G

Gate Input Resistance ––– 1.4 –––

Ω

f = 1MHz, open drain

Dynamic @ T

J

= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

gfs Forward Transconductance 160 ––– ––– S

Q

g

Total Gate Charge ––– 170 250 nC

Q

gs

Gate-to-Source Charge ––– 46 –––

Q

gd

Gate-to-Drain ("Miller") Charge ––– 62 –––

t

d(on)

Turn-On Delay Time ––– 26 ––– ns

t

r

Rise Time ––– 110 –––

t

d(off)

Turn-Off Delay Time ––– 68 –––

t

f

Fall Time ––– 78 –––

C

iss

Input Capacitance ––– 7670 ––– pF

C

oss

Output Capacitance ––– 540 –––

C

rss

Reverse Transfer Capacitance ––– 280 –––

C

oss

eff. (ER)

Effective Output Capacitance (Energy Related)

––– 650 –––

C

oss

eff. (TR)

Effective Output Capacitance (Time Related)

––– 720.1 –––

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– –––

130

A

(Body Diode)

I

SM

Pulsed Source Current ––– ––– 550

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.3 V

t

rr

Reverse Recovery Time ––– 45 68 ns

T

J

= 25°C

V

R

= 85V,

––– 55 83

T

J

= 125°C

I

F

= 75A

Q

rr

Reverse Recovery Charge ––– 82 120 nC

T

J

= 25°C

di/dt = 100A/µs

––– 120 180

T

J

= 125°C

I

RRM

Reverse Recovery Current ––– 3.3 ––– A

T

J

= 25°C

t

on

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

V

DS

= 50V, I

D

= 75A

I

D

= 75A

V

GS

= 20V

V

GS

= -20V

MOSFET symbol

showing the

V

DS

= 80V

Conditions

V

GS

= 10V

V

GS

= 0V

V

DS

= 50V

ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 0V to 80V , See Fig.11

V

GS

= 0V, V

DS

= 0V to 80V , See Fig. 5

T

J

= 25°C, I

S

= 75A, V

GS

= 0V

integral reverse

p-n junction diode.

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 75A

V

DS

= V

GS

, I

D

= 250µA

V

DS

= 100V, V

GS

= 0V

V

DS

= 100V, V

GS

= 0V, T

J

= 125°C

I

D

= 75A

R

G

= 2.6

Ω

V

GS

= 10V

V

DD

= 65V

IRF/B/S/SL4310PbF

www.irf.com 3

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage

3.0 4.0 5.0 6.0 7.0 8.0

V

GS

, Gate-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

V

DS

= 50V

≤ 60µs PULSE WIDTH

T

J

= 25°C

T

J

= 175°C

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

3.0

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 75A

V

GS

= 10V

1 10 100

V

DS

, Drain-to-Source Voltage (V)

0

2000

4000

6000

8000

10000

12000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

Coss

Crss

Ciss

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0 40 80 120 160 200 240 280

Q

G

Total Gate Charge (nC)

0

4

8

12

16

20

V

G

S

,

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

V

DS

= 80V

VDS= 50V

VDS= 20V

I

D

= 75A

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤

60µs PULSE WIDTH

Tj = 25°C

4.5V

VGS

TOP 15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM 4.5V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤

60µs PULSE WIDTH

Tj = 175°C

4.5V

VGS

TOP 15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM 4.5V

Part #	IRFS4310TRLPBF
Description	Trans MOSFET N-CH 100V 130A 3-Pin(2+Tab) D2PAK T/R (Alt: I
Category	RECTIFIER
Availability	Out of Stock
Qty	0

IRFS4310TRLPBF

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Technical Document