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SP000095275

Part #	SP000095275
Description	Trans MOSFET N-CH 650V 25A 3-Pin TO-220FP Tube - T01
Category	RECTIFIER
Availability	Out of Stock
Qty	0

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Technical Document

DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

IPA60R125CP

CoolMOS

TM

Power Transistor

Features

• Worldwide best R

DS,on

in TO220 Fullpak

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1)

for target applications

• Pb-free lead plating; RoHS compliant

CoolMOS CP is specially designed for:

• Hard switching SMPS topologies

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

2)

I

D

T

C

=25 °C

A

T

C

=100 °C

Pulsed drain current

3)

I

D,pulse

T

C

=25 °C

Avalanche energy, single pulse

E

AS

I

D

=11 A, V

DD

=50 V

708 mJ

Avalanche energy, repetitive t

AR

3),4)

E

AR

I

D

=11 A, V

DD

=50 V

Avalanche current, repetitive t

AR

3),4)

I

AR

A

MOSFET dv /dt ruggedness dv /dt

V

DS

=0...480 V

V/ns

Gate source voltage

V

GS

static V

AC (f >1 Hz)

Power dissipation

P

tot

T

C

=25 °C

W

Operating and storage temperature

T

j

, T

stg

°C

Mounting torque M2.5 screws 50 Ncm

±30

35

-55 ... 150

1.1

11

50

±20

Value

25

16

82

V

DS

@ T

j,max

650 V

R

DS(on),max

0.125

Ω

Q

g,typ

53 nC

Product Summary

Type Package Ordering Code Marking

IPA60R125CP PG-TO220-3-31 SP000095275 6R125P

PG-TO220-3-31

Rev. 1.3 page 1 2005-12-22

IPA60R125CP

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous diode forward current

2)

I

S

A

Diode pulse current

3)

I

S,pulse

82

Reverse diode dv /dt

5)

dv /dt 15 V/ns

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

R

thJC

- - 3.6 K/W

R

thJA

leaded - - 80

Soldering temperature,

wavesoldering only allowed at leads

T

sold

1.6 mm (0.063 in.)

from case for 10 s

- - 260 °C

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

=250 µA

600 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=1.1 mA

2.5 3 3.5

Zero gate voltage drain current

I

DSS

V

DS

=600 V, V

GS

=0 V,

T

j

=25 °C

--2µA

V

DS

=600 V, V

GS

=0 V,

T

j

=150 °C

-20-

Gate-source leakage current

I

GSS

V

GS

=20 V, V

DS

=0 V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=10 V, I

D

=16 A,

T

j

=25 °C

- 0.11 0.125

Ω

V

GS

=10 V, I

D

=16 A,

T

j

=150 °C

- 0.30 -

Gate resistance

R

G

f =1 MHz, open drain - 2.1 -

Ω

Value

T

C

=25 °C

25

Values

Thermal resistance, junction -

ambient

Rev. 1.3 page 2 2005-12-22

IPA60R125CP

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

- 2500 - pF

Output capacitance

C

oss

- 120 -

Effective output capacitance, energy

related

6)

C

o(er)

- 110 -

Effective output capacitance, time

related

7)

C

o(tr)

- 300 -

Turn-on delay time

t

d(on)

-15-ns

Rise time

t

r

-5-

Turn-off delay time

t

d(off)

-50-

Fall time

t

f

-5-

Gate Charge Characteristics

Gate to source charge

Q

gs

-12-nC

Gate to drain charge

Q

gd

-18-

Gate charge total

Q

g

-5370

Gate plateau voltage

V

plateau

- 5.0 - V

Reverse Diode

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=16 A,

T

j

=25 °C

- 0.9 1.2 V

Reverse recovery time

t

rr

- 430 - ns

Reverse recovery charge

Q

rr

-9-µC

Peak reverse recovery current

I

rrm

-42-A

1)

J-STD20 and JESD22

2)

Limited only by maximum temperature

3)

Pulse width t

p

limited by T

j,max

4)

Repetitive avalanche causes additional power losses that can be calculated as P

AV

=E

AR

*f.

5)

I

SD

<=I

D

, di/dt<=200A/µs, V

DClink

=400V, V

peak

<V

(BR)DSS

, T

j

<T

jmax

, identical low-side and high side switch.

6)

C

o(er)

is a fixed capacitance that gives the same stored energy as C

oss

while V

DS

is rising from 0 to 80% V

DSS

.

7)

C

o(tr)

is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 to 80% V

DSS

.

V

R

=400 V, I

F

=I

S

,

di

F

/dt =100 A/µs

Values

V

GS

=0 V, V

DS

=100 V,

f =1 MHz

V

DD

=400 V,

V

GS

=10 V, I

D

=16 A,

R

G

=3.3 Ω

V

DD

=400 V, I

D

=16 A,

V

GS

=0 to 10 V

V

GS

=0 V, V

DS

=0 V

to 480 V

Rev. 1.3 page 3 2005-12-22

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