HAT2169H
Rev.4.00 Sep 20, 2005 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
40 — — V I
D
= 10 mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
±20 — — V I
G
= ±100 µA, V
DS
= 0
Gate to source leak current I
GSS
— — ±10 µA V
GS
= ±16 V, V
DS
= 0
Zero gate voltage drain current I
DSS
— — 1 µA V
DS
= 40 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.5 V V
DS
= 10 V,
I
D
= 1 mA
R
DS(on)
— 2.8 3.5 mΩ I
D
= 25 A, V
GS
= 10 V
Note4
Static drain to source on state
resistance
R
DS(on)
— 4.0 6.0 mΩ I
D
= 25 A, V
GS
= 4.5 V
Note4
Forward transfer admittance |y
fs
| 39 65 — S I
D
= 25 A, V
DS
= 10 V
Note4
Input capacitance Ciss — 6650 — pF
Output capacitance Coss — 890 — pF
Reverse transfer capacitance Crss — 360 — pF
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Gate Resistance Rg — 0.5 — Ω
Total gate charge Qg — 45 — nC
Gate to source charge Qgs — 21 — nC
Gate to drain charge Qgd — 10 — nC
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 50 A
Turn-on delay time t
d(on)
— 15 — ns
Rise time t
r
— 64 — ns
Turn-off delay time t
d(off)
— 55 — ns
Fall time t
f
— 9.5 — ns
V
GS
= 10 V, I
D
= 25 A,
V
DD
≅ 10 V, R
L
= 0.4 Ω,
Rg = 4.7 Ω
Body–drain diode forward voltage V
DF
— 0.83 1.08 V IF = 50 A, V
GS
= 0
Note4
Body–drain diode reverse recovery
time
t
rr
— 40 — ns
IF = 50 A, V
GS
= 0
di
F
/ dt = 100 A/ µs
Notes: 4. Pulse test
