Name: FQP6N40C
SKU: FQP6N40C
Price: 0.41004 USD
Availability: InStock

FQP6N40C/FQPF6N40C

QFET

TM

FQP6N40C/FQPF6N40C

400V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

electronic lamp ballasts based on half bridge topology.

Features

• 6A, 400V, R

DS(on)

= 1.0 Ω @V

GS

= 10 V

• Low gate charge ( typical 16nC)

• Low Crss ( typical 15pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings T

C

= 25°C unless otherwise noted

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol Parameter FQP6N40C FQPF6N40C Units

V

DSS

Drain-Source Voltage 400 V

I

D

Drain Current

- Continuous (T

C

= 25°C)

66 *A

- Continuous (T

C

= 100°C)

3.6 3.6 * A

I

DM

Drain Current - Pulsed

(Note 1)

24 24 * A

V

GSS

Gate-Source Voltage ± 30 V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

270 mJ

I

AR

Avalanche Current

(Note 1)

6A

E

AR

Repetitive Avalanche Energy

(Note 1)

7.3 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

P

D

Power Dissipation (T

C

= 25°C)

73 38 W

- Derate above 25°C 0.58 0.3 W/°C

T

J

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

T

L

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300 °C

Symbol Parameter FQP6N40C FQPF6N40C Units

R

θJC

Thermal Resistance, Junction-to-Case 1.71 3.31 °C/W

R

θCS

Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

TO-220

FQP Series

G

SD

TO-220F

FQPF Series

G

S

D

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S

D

G

Rev. A, May 2003

FQP6N40C/FQPF6N40C

Electrical Characteristics T

C

= 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 13.7 mH, I

AS

= 6 A, V

DD

= 50V, R

G

= 25 Ω, Starting T

J

= 25°C

3. I

SD

≤ 6A, di/dt ≤ 200A/µs, V

DD

≤ BV

DSS,

Starting T

J

= 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

GS

= 0 V, I

D

= 250 µA

400 -- -- V

∆BV

DSS

/ ∆T

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250 µA, Referenced to 25°C

-- 0.54 -- V/°C

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 400 V, V

GS

= 0 V

-- -- 1 µA

V

DS

= 320 V, T

C

= 125°C

-- -- 10 µA

I

GSSF

Gate-Body Leakage Current, Forward

V

GS

= 30 V, V

DS

= 0 V

-- -- 100 nA

I

GSSR

Gate-Body Leakage Current, Reverse

V

GS

= -30 V, V

DS

= 0 V

-- -- -100 nA

On Characteristics

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250 µA

2.0 -- 4.0 V

R

DS(on)

Static Drain-Source

On-Resistance

V

GS

= 10 V, I

D

= 3A

-- 0.83 1 Ω

g

FS

Forward Transconductance

V

DS

= 40 V, I

D

= 3A

(Note 4)

-- 4.7 -- S

Dynamic Characteristics

C

iss

Input Capacitance

V

DS

= 25 V, V

GS

= 0 V,

f = 1.0 MHz

-- 480 625 pF

C

oss

Output Capacitance -- 80 105 pF

C

rss

Reverse Transfer Capacitance -- 15 20 pF

Switching Characteristics

t

d(on)

Turn-On Delay Time

V

DD

= 200 V, I

D

= 6A,

R

G

= 25 Ω

(Note 4, 5)

-- 13 35 ns

t

r

Turn-On Rise Time -- 65 140 ns

t

d(off)

Turn-Off Delay Time -- 21 55 ns

t

f

Turn-Off Fall Time -- 38 85 ns

Q

g

Total Gate Charge

V

DS

= 320 V, I

D

= 6A,

V

GS

= 10 V

(Note 4, 5)

-- 16 20 nC

Q

gs

Gate-Source Charge -- 2.3 -- nC

Q

gd

Gate-Drain Charge -- 8.2 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current -- -- 6 A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A

V

SD

Drain-Source Diode Forward Voltage

V

GS

= 0 V, I

S

= 6 A

-- -- 1.4 V

t

rr

Reverse Recovery Time

V

GS

= 0 V, I

S

= 6 A,

dI

F

/ dt = 100 A/µs

(Note 4)

-- 230 -- ns

Q

rr

Reverse Recovery Charge -- 1.7 -- µC

Rev. A, May 2003

FQP6N40C/FQPF6N40C

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10

-1

10

0

10

1

150

$

%

Notes :

1. V

GS

= 0V

2. 250

&

s Pulse Test

25

$

I

DR

, Reverse Drain Current [A]

V

SD

, Source-Drain voltage [V]

0 5 10 15 20

0.5

1.0

1.5

2.0

2.5

3.0

3.5

V

GS

= 20V

V

GS

= 10V

%

Note : T

J

= 25

$

R

DS( ON)

[

'

],

Drain-Source On-Resistance

I

D

, Drain Current [A]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

%

Notes :

1. 250

&

s Pulse Test

2. T

C

= 25

$

I

D

, Drain Current [A]

V

DS

, Drain-Source Voltage [V]

246810

10

-1

10

0

10

1

150

o

C

25

o

C

-55

o

C

%

Notes :

1. V

DS

= 40V

2. 250

&

s Pulse Test

I

D

, Drain Current [A]

V

GS

, Gate-Source Voltage [V]

10

-1

10

0

10

1

0

200

400

600

800

1000

1200

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

%

Note ;

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitances [pF]

V

DS

, Drain-Source Voltage [V]

0 5 10 15 20

0

2

4

6

8

10

12

V

DS

= 200V

V

DS

= 80V

V

DS

= 320V

%

Note : I

D

= 6A

V

GS

, Gate-Source Voltage [V]

Q

G

, Total Gate Charge [nC]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Part #	FQP6N40C
Description	Trans MOSFET N-CH 400V 6A 3-Pin(3+Tab) TO-220AB Rail (Alt:
Category	RECTIFIER
Availability	In Stock
Qty	37

FQP6N40C

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Technical Document