RJK0330DPB
REJ03G1639-0400 Rev.4.00 Apr 10, 2008
Page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30 — — V I
D
= 10 mA, V
GS
= 0
Gate to source leak current I
GSS
— — ±0.1 µA V
GS
= ±20 V, V
DS
= 0
Zero gate voltage drain current I
DSS
— — 1 µA V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
1.2 — 2.5 V V
DS
= 10 V, I
D
= 1 mA
R
DS(on)
— 2.1 2.7 mΩ I
D
= 22.5 A, V
GS
= 10 V
Note4
Static drain to source on state
resistance
R
DS(on)
— 2.8 3.9 mΩ I
D
= 22.5 A, V
GS
= 4.5 V
Note4
Forward transfer admittance |y
fs
| — 90 — S I
D
= 22.5 A, V
DS
= 10 V
Note4
Input capacitance Ciss — 4300 — pF
Output capacitance Coss — 800 — pF
Reverse transfer capacitance Crss — 245 — pF
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Gate Resistance Rg — 0.4 — Ω
Total gate charge Qg — 27 — nC
Gate to source charge Qgs — 10.5 — nC
Gate to drain charge Qgd — 5.8 — nC
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 45 A
Turn-on delay time t
d(on)
— 6.8 — ns
Rise time t
r
— 3.9 — ns
Turn-off delay time t
d(off)
— 50 — ns
Fall time t
f
— 5.4 — ns
V
GS
= 10 V, I
D
= 22.5 A,
V
DD
≅ 10 V, R
L
= 0.44 Ω,
Rg = 4.7 Ω
Body–drain diode forward voltage V
DF
— 0.78 1.02 V I
F
= 45 A, V
GS
= 0
Note4
Body–drain diode reverse
recovery time
t
rr
— 36 — ns
I
F
= 45 A, V
GS
= 0
di
F
/ dt = 100 A/ µs
Body–drain diode reverse
recovery charge
Q
rr
— 34 — nC
Notes: 4. Pulse test
