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MBRF1045

Part # MBRF1045
Description DIODE SCHOTTKY 45V ITO220AC
Category RECTIFIER
Availability Out of Stock
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Qty Price
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1
Rectifier Device Data
The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in
a large area metal–to–silicon power diode. State–of–the–art geometry features
epitaxial construction with oxide passivation and metal overlay contact. Ideally
suited for use as rectifiers in very low–voltage, high–frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
High Junction Temperature Capability
High dv/dt Capability
Excellent Ability to Withstand Reverse Avalanche Energy
Transients
Guardring for Stress Protection
Epoxy Meets UL94, VO at 1/8
Electrically Isolated. No Isolation Hardware Required.
UL Recognized File #E69369
(1)
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Max. for 10
Seconds
Shipped 50 units per plastic tube
Marking: B1045
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45 Volts
Average Rectified Forward Current (Rated V
R
), T
C
= 135°C I
F(AV)
10 Amps
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz), T
C
= 135°C
I
FRM
20 Amps
Non–repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
150 Amps
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) Figure 6 I
RRM
1.0 Amp
Operating Junction and Storage Temperature T
J
, T
stg
– 65 to +150 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10000 V/µs
RMS Isolation Voltage (t = 1 second, R.H. 30%, T
A
= 25°C)
(2)
Per Figure 8
Per Figure 9
(1)
Per Figure 10
V
iso1
V
iso2
V
iso3
4500
3500
1500
Volts
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Case R
θJC
4.0 °C/W
Lead Temperature for Soldering Purposes: 1/8 from Case for 5 seconds T
L
260 °C
(1) UL Recognized mounting method is per Figure 9.
(2) Proper strike and creepage distance must be provided.
SWITCHMODE is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
Order this document
by MBRF1045/D
SEMICONDUCTOR TECHNICAL DATA
12
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES
45 VOLTS
CASE 221E–01
ISOLATED TO–220
Motorola Preferred Device
1
2
Rev 1
2
Rectifier Device Data
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (3)
(i
F
= 20 Amp, T
C
= 25°C)
(i
F
= 20 Amp, T
C
= 125°C)
(i
F
= 10 Amp, T
C
= 125°C)
v
F
0.84
0.72
0.57
Volts
Maximum Instantaneous Reverse Current (3)
(Rated DC Voltage, T
C
= 25°C)
(Rated DC Voltage, T
C
= 125°C)
i
R
0.1
15
mA
(3) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%
V
R
, REVERSE VOLTAGE (VOLTS)
I
R
, REVERSE CURRENT (mA)
0.001
10020304050
0.01
0.1
1
10
100
T
J
= 150
°
C
75
°
C
25
°
C
100
°
C
125
°
C
NUMBER OF CYCLES AT 60 Hz
I
FSM
, PEAK HALF-WAVE CURRENT (AMPS)
20
21 5 10 20 100
30
50
70
100
200
3 7 30 50 70
100
50
20
, INSTANTANEOUS FORWARD CURRENT (AMPS)
i
F
10
5
2
1
0.5
0.2
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Maximum Forward Voltage
100
°
C
25
°
C
T
J
= 150
°
C
0.7
70
30
7
3
0.3
100
50
20
, INSTANTANEOUS FORWARD CURRENT (AMPS)
i
F
10
5
2
1
0.5
0.2
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
100
°
C
25
°
C
T
J
= 150
°
C
0.7
70
30
7
3
0.3
Figure 2. Typical Forward Voltage
T
J
= 125
°
C, V
RRM
MAY BE APPLIED
BETWEEN EACH CYCLE OF SURGE
Figure 3. Maximum Reverse Current
Figure 4. Maximum Surge Capability
3
Rectifier Device Data
Figure 5. Capacitance
150
200
300
500
700
1000
1500
0.05 0.1 0.2 0.5 1 5 10 20 50
V
R
, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
2
TYPICAL
MAXIMUM
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction diode
forward and reverse recovery transients due to minority
carrier injection and stored charge. Satisfactory circuit
analysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance. (See
Figure 5.)
Rectification efficiency measurements show that operation
will be satisfactory up to several megahertz. For example,
relative waveform rectification efficiency is approximately 70
percent at 2.0 MHz, e.g., the ratio of dc power to RMS power
in the load is 0.28 at this frequency, whereas perfect
rectification would yield 0.406 for sine wave inputs. However,
in contrast to ordinary junction diodes, the loss in waveform
efficiency is not indicative of power loss; it is simply a result of
reverse current flow through the diode capacitance, which
lowers the dc output voltage.
Figure 6. Test Circuit for dv/dt and Reverse Surge Current
2.0
µ
s
1.0 kHz
12 V
100
12 Vdc
V
CC
2N2222
100
CARBON
2N6277
1.0 CARBON
1N5817
D.U.T.
4.0
µ
F
+
2.0 k
+150 V, 10 mAdc
CURRENT
AMPLITUDE
ADJUST
0 – 10 AMPS
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