Name: C2M0160120D
SKU: C2M0160120D
Price: 4.16910 USD
Availability: OutOfStock

7 C2M0160120D Rev.

Typical Performance

100

150

200

250

300

0 5 10 15 20 25 30

Switching Loss (µJ)

External Gate Resistor RG(ext) (Ohms)

Off

Total

Conditions:

= 25 °C

= 800 V

= 10 A

= -5/+20 V

FWD = C2D05120A

L = 856 μH

100

120

140

160

180

200

-55 -5 45 95 145

Swithcing Loss (µJ)

Junction Temperature, T

(°C)

Conditions:

= 10 A

= 800 V

G(ext)

= 6.8 Ω

= -5/+20 V

FWD = C2D05120A

L = 856 µH

Off

Total

0 5 10 15 20 25

Time (ns)

External Gate Resistor, R

G(ext)

(Ohms)

Conditions:

= 25 °C

= 800 V

= 80 Ω

= -5/+20 V

d (off) V

d (on) V

f V

r V

Figure 25. Clamped Inductive Switching Energy vs. R

G(ext)

Figure 26. Clamped Inductive Switching Energy vs.

Junction Temperature

Figure 27. Resistive Switching Times vs. External Gate

Resistor (V

= 800V, I

= 10A)

Figure 28. Resistive Switching Time Description

8 C2M0160120D Rev.

Clamped Inductive Switch Testing Fixture and Waveforms

Figure 29. Clamped Inductive Switching Waveform Test Circuit

C = 42.3 µF

V = 800 V

D.U.T.

C2M0080120D

C4D10120D

10A, 1200V

SiC Schottky

L = 856 µH

DUT

SiC Schottky

Diode

ESD Ratings

ESD Test Total Devices Sampled ResultingClassication

ESD-HBM All Devices Passed 1000V 2 (>2000V)

ESD-MM All Devices Passed 400V C (>400V)

ESD-CDM All Devices Passed 1000V IV (>1000V)

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body

nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited

to equipment used in the operation of nuclear facilities, life-support machines, cardiac debrillators or similar emergency medical

equipment, aircraft navigation or communication or control systems, air trafc control systems, or weapons systems.

Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc.

9 C2M0160120D Rev.

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

Fax: +1.919.313.5451

www.cree.com/power

Package Dimensions

Package TO-247-3

Recommended Solder Pad Layout

TO-247-3

(1)

(2)

(3)

POS

Inches Millimeters

Min Max Min Max

A .190 .205 4.83 5.21

A1 .090 .100 2.29 2.54

A2 .075 .085 1.91 2.16

b .042 .052 1.07 1.33

b1 .075 .095 1.91 2.41

b2 .075 .085 1.91 2.16

b3 .113 .133 2.87 3.38

b4 .113 .123 2.87 3.13

c .022 .027 0.55 0.68

D .819 .831 20.80 21.10

D1 .640 .695 16.25 17.65

D2 .037 .049 0.95 1.25

E .620 .635 15.75 16.13

E1 .516 .557 13.10 14.15

E2 .145 .201 3.68 5.10

E3 .039 .075 1.00 1.90

E4 .487 .529 12.38 13.43

e .214 BSC 5.44 BSC

N 3 3

L .780 .800 19.81 20.32

L1 .161 .173 4.10 4.40

ØP .138 .144 3.51 3.65

Q .216 .236 5.49 6.00

S .238 .248 6.04 6.30

Part Number Package Marking

C2M0160120D TO-247-3 C2M0160120

Part #	C2M0160120D
Description	Trans MOSFET N-CH SiC 12V 17.7A 3-Pin(3+Tab) TO-247
Category	RECTIFIER
Availability	Out of Stock
Qty	0

C2M0160120D

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Technical Document