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C2M0160120D

Part # C2M0160120D
Description Trans MOSFET N-CH SiC 12V 17.7A 3-Pin(3+Tab) TO-247
Category RECTIFIER
Availability Out of Stock
Qty 0
Qty Price
1 + $4.16910

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

4 C2M0160120D Rev.
-
Typical Performance
Figure 8. Typical Body Diode Characteristic
T
J
= -55 ºC
0
5
10
15
20
0 2 4 6 8 10 12 14
Drain-Source Current, I
DS
(A)
Gate-Source Voltage, V
GS
(V)
Conditions:
V
DS
= 20 V
tp < 200 µs
T
J
= 150 °C
T
J
= -55 °C
T
J
= 25 °C
-30
-25
-20
-15
-10
-5
0
-5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(A)
V
GS
= 0 V
V
GS
= -2 V
V
GS
= -5 V
Condition:
T
J
= -55 °C
t
p
< 50 µs
-30
-25
-20
-15
-10
-5
0
-5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(A)
V
GS
= 0 V
V
GS
= -2 V
V
GS
= -5 V
Condition:
T
J
= 25 °C
t
p
< 50 µs
-30
-25
-20
-15
-10
-5
0
-5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(A)
V
GS
= 0 V
V
GS
= -2 V
V
GS
= -5 V
Condition:
T
J
= 150 °C
t
p
< 50 µs
Figure 7. Typical Transfer Characteristic
For Various Temperatures
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50 -25 0 25 50 75 100 125 150
Threshold Voltage, V
th
(V)
Junction Temperature T
J
(°C)
Conditions
V
DS
= 10 V
I
DS
= 0.5 mA
Conditions
V
DS
= 10 V
I
DS
= 0.5 mA
Typ
Min
-5
0
5
10
15
20
25
0 5 10 15 20 25 30 35
Gate-Source Voltage, V
GS
(V)
Gate Charge, Q
G
(nC)
Conditions:
I
DS
= 10 A
I
GS
= 1 mA
V
DS
= 800 V
T
J
= 25 °C
Figure 9. Typical Body Diode Characteristic
T
J
= 25 ºC
Figure 10. Typical Body Diode Characteristic
T
J
= 150 ºC
Figure 11. Typical and Minimum Threshold Voltage vs.
Temperature
Figure 12. Typical Gate Charge Characteristic 25 ºC
5 C2M0160120D Rev.
-
1
10
100
1000
0 200 400 600 800 1000
Capacitance (pF)
Drain-Source Voltage, V
DS
(V)
C
iss
C
oss
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
C
rss
Typical Performance
-30
-25
-20
-15
-10
-5
0
-5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
J
= -55 °C
tp < 50 µs
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V
-30
-25
-20
-15
-10
-5
0
-5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
J
= 25 °C
tp < 50 µs
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V
-30
-25
-20
-15
-10
-5
0
-5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
Conditions:
T
J
= 150 °C
tp < 50 µs
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V
1
10
100
1000
0 50 100 150 200
Capacitance (pF)
Drain-Source Voltage, V
DS
(V)
C
iss
C
oss
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
C
rss
0
5
10
15
20
25
30
0 200 400 600 800 1000 1200
Stored Energy, E
OSS
(µJ)
Drain to Source Voltage, V
DS
(V)
Figure 18. Stored Energy C
OSS
Figure 16. Typical Typical Capacitances vs. Drain-Source
Voltage (0 - 200V)
Figure 17. Typical Typical Capacitances vs. Drain-Source
Voltage (0 - 1000V)
Figure 13. Typical 3rd Quadrant Characteristic
T
J
= -55 ºC
Figure 14. Typical 3rd Quadrant Characteristic
T
J
= 25 ºC
Figure 15. Typical 3rd Quadrant Characteristic
T
J
= 150 ºC
6 C2M0160120D Rev.
-
Typical Performance
0
2
4
6
8
10
12
14
16
18
20
-55 -5 45 95 145
Drain-Source Continous Current, I
DS (DC)
(A)
Case Temperature, T
C
(°C)
Conditions:
T
J
≤ 150 °C
0
20
40
60
80
100
120
140
-55 -5 45 95 145
Maximum Dissipated Power, P
tot
(W)
Case Temperature, T
C
(°C)
Conditions:
T
J
≤ 150 °C
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, Z
thJC
(
o
C/W)
Time, t
p
(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
0.01
0.10
1.00
10.00
0.1 1 10 100 1000
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
100 µs
1 ms
10 µs
Conditions:
T
C
= 25 °C
D = 0,
Parameter: t
p
100 ms
Limited by R
DS On
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (V
DS
= 600 V)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (V
DS
= 800 V)
Figure 19. Continuous Current Derating Curve Figure 20. Continuous Power Derating
Figure 21. Typical Transient Thermal Impedance
(Junction - Case)
Figure 22. Safe Operating Area
0
100
200
300
400
500
600
700
800
900
0 5 10 15 20 25 30 35
Switching Energy (µJ)
Drain to Source Current, I
DS
(A)
Conditions:
T
J
= 25 °C
V
DD
= 800 V
R
G(ext)
= 6.8 Ω
V
GS
= -5/+20 V
FWD = C2D05120A
L = 856 μH
E
Off
E
On
E
Total
0
100
200
300
400
500
600
700
0 5 10 15 20 25 30 35
Switching Loss (µJ)
Drain to Source Current, I
DS
(A)
E
Off
E
On
E
Total
Conditions:
T
J
= 25 °C
V
DD
= 600 V
R
G(ext)
= 6.8 Ω
V
GS
= -5/+20 V
FWD = C2D05120A
L = 856 μH
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