2 C2M0160120D Rev.
-
Electrical Characteristics (T
C
=25˚Cunlessotherwisespecied)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V
(BR)DSS
Drain-Source Breakdown Voltage 1200 V V
GS
=
0 V, I
DS
=50μA
V
GS(th)
Gate Threshold Voltage
2.0 2.5
V
V
DS
= 10V, I
DS
= 0.5 mA
Fig. 11
1.5 1.9
V
V
DS
= 10V, I
DS
= 0.5 mA,
T
J
= 150ºC
I
DSS
Zero Gate Voltage Drain Current
1 100
μA
V
DS
= 1200 V, V
GS
= 0 V
10 250
V
DS
= 1200 V, V
GS
= 0 V
T
J
= 150ºC
I
GSS
Gate-Source Leakage Current 0.25 μA V
GS
= 20 V, V
DS
= 0 V
R
DS(on)
Drain-Source On-State Resistance
160 196
mΩ
V
GS
= 20 V, I
D
= 10 A
Fig. 4,
5, 6
290 400 V
GS
= 20 V, I
D
= 10A, T
J
= 150ºC
g
fs
Transconductance
4.3
S
V
DS
=
20 V, I
DS
=
10 A
Fig. 7
4.1 V
DS
=
20 V, I
DS
=
10 A, T
J
= 150ºC
C
iss
Input Capacitance 527
pF
V
GS
= 0 V
V
DS
= 800 V
f = 1 MHz
V
AC
= 25 mV
Fig.
16, 17
C
oss
Output Capacitance 47
C
rss
Reverse Transfer Capacitance 4
E
oss
C
oss
Stored Energy 15 μJ Fig. 18
t
d(on)v
Turn-On Delay Time 7
ns
V
DD
= 800 V, V
GS
= -5/20 V
I
D
= 10 A
R
G(ext)
=0Ω,R
L
=40Ω
Timing relative to V
DS
Fig. 27
t
fv
Fall Time 7
t
d(off)v
Turn-Off Delay Time 13
t
rv
Rise Time 12
R
G
Internal Gate Resistance 6.5 Ω f = 1 MHz
,
V
AC
=
25 mV
Built-in SiC Body Diode Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
SD
Diode Forward Voltage
3.1
V
V
GS
= -5 V, I
F
=
5 A,
T
J
= 25 ºC
Fig 9, 10
2.9 V
GS
= -2 V, I
F
=
5 A,
T
J
= 150 ºC
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
R
θJC
Thermal Resistance from Junction to Case 0.9 1.0
K/W Fig. 21
R
θCS
Case to Sink, w/ Thermal Compound 0.25
R
θJA
Thermal Resistance From Junction to Ambient 40
Gate Charge Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
Q
gs
Gate to Source Charge 6.9
nC
V
DS
= 800 V, V
GS
= -5/20 V
I
D
=10 A
Per JEDEC24 pg 27
Fig. 12
Q
gd
Gate to Drain Charge 13.6
Q
g
Gate Charge Total 32.6
